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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD, SDM, ITE-IST [detail] |
2020-08-06 10:15 |
Online |
Online |
[Invited Talk]
Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2020-2 ICD2020-2 |
Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conven... [more] |
SDM2020-2 ICD2020-2 pp.3-7 |
SDM |
2015-06-19 17:10 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate Takahiro Mori (AIST), Naruki Ninomiya (YNU), Noriyuki Uchida, Toshitaka Kubo (AIST), Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama (NIMS), Masatoshi Tanaka (YNU), Atsushi Ando (AIST) SDM2015-56 |
We report the device fabrication and characterization of the high-k/metal gate MoS2 MOSFETs. To investigate the scatteri... [more] |
SDM2015-56 pp.99-103 |
ED, SDM, CPM |
2012-05-18 09:25 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29 |
Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] |
ED2012-27 CPM2012-11 SDM2012-29 pp.49-52 |
ED |
2007-11-27 13:30 |
Miyagi |
Tohoku Univ. Research Institute of Electrical Communication |
Research on SiGe/Si HEMT for millimeter-wave band operation Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187 |
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] |
ED2007-187 pp.1-5 |
ED, CPM, LQE |
2006-10-05 15:45 |
Kyoto |
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Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] |
ED2006-158 CPM2006-95 LQE2006-62 pp.35-38 |
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