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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM, ITE-IST [detail] 2020-08-06
10:15		 Online Online [Invited Talk] Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics
Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2020-2 ICD2020-2		 Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conven... [more] SDM2020-2 ICD2020-2
pp.3-7
SDM 2015-06-19
17:10		 Aichi VBL, Nagoya Univ. [Invited Lecture] Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate
Takahiro Mori (AIST), Naruki Ninomiya (YNU), Noriyuki Uchida, Toshitaka Kubo (AIST), Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama (NIMS), Masatoshi Tanaka (YNU), Atsushi Ando (AIST) SDM2015-56		 We report the device fabrication and characterization of the high-k/metal gate MoS2 MOSFETs. To investigate the scatteri... [more] SDM2015-56
pp.99-103
ED, SDM, CPM 2012-05-18
09:25		 Aichi VBL, Toyohashi Univ. of Technol. Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces
Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29		 Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] ED2012-27 CPM2012-11 SDM2012-29
pp.49-52
ED 2007-11-27
13:30		 Miyagi Tohoku Univ. Research Institute of Electrical Communication Research on SiGe/Si HEMT for millimeter-wave band operation
Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187		 We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] ED2007-187
pp.1-5
ED, CPM, LQE 2006-10-05
15:45		 Kyoto   Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements
Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) 		AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] ED2006-158 CPM2006-95 LQE2006-62
pp.35-38
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