| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] | 2023-11-15 15:05 |
Kumamoto | Civic Auditorium Sears Home Yume Hall (Primary: On-site, Secondary: Online) |
Co-design of Strong Lottery Ticket Hypothesis and FeFET-based CiM Kenshin Yamauchi, Ayumu Yamada, Naoko Misawa, Seong-Kun Cho, Kasidit Toprasertpong, Shinichi Takagi, Chihiro Matsui, Ken Takeuchi (Univ. of Tokyo)  VLD2023-40 ICD2023-48 DC2023-47 RECONF2023-43 |
The Strong Lottery Hypothesis insists that an initialized neural network contains well performance partial networks and ... [more] | VLD2023-40 ICD2023-48 DC2023-47 RECONF2023-43 pp.60-63 |
| VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] | 2023-11-16 10:20 |
Kumamoto | Civic Auditorium Sears Home Yume Hall (Primary: On-site, Secondary: Online) |
Design and Error-tolerance of FeFET-based CiM for Hyperdimensional Computing Chihiro Matsui, Eitaro Kobayashi, Naoko Misawa, Kasidit Toprasertpong, Shinichi Takagi, Ken Takeuchi (Univ. of Tokyo) VLD2023-48 ICD2023-56 DC2023-55 RECONF2023-51 |
A high-speed massively parallel operation for learning and inference in Hyperdimensional Computing (HDC) using voltage-s... [more] | VLD2023-48 ICD2023-56 DC2023-55 RECONF2023-51 pp.99-100 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 09:30 |
Online | Online | [Invited Talk]
Analog in-memory computing in FeFET based 1T1R array for low-power edge AI applications Daisuke Saito, Toshiyuki Kobayashi, Hiroki Koga (SONY), Yusuke Shuto, Jun Okuno, Kenta Konishi (SSS), Masanori Tsukamoto, Kazunobu Ohkuri (SONY), Taku Umebayashi (SSS), Takayuki Ezaki (SONY) SDM2021-36 ICD2021-7 |
Deep neural network (DNN) inference for edge AI requires low-power operation, which can be achieved by implementing mass... [more] | SDM2021-36 ICD2021-7 pp.33-37 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 10:15 |
Online | Online | [Invited Talk]
Voltage-sensing FeFET CiM with MAC by Source-follower Read and Charge-sharing Chihiro Matsui, Kasidit Toprasertpong, Shinichi Takagi, Ken Takeuchi (Univ. Tokyo) SDM2021-37 ICD2021-8 |
An energy-efficient and high-throughput HZO FeFET Computation-in-Memory (CiM) is proposed. The FeFET CiM performs voltag... [more] | SDM2021-37 ICD2021-8 pp.38-41 |
| SDM | 2021-01-28 13:05 |
Online | Online | [Invited Talk]
**** Reika Ichihara (Kioxia) SDM2020-49 |
It has been known that charge trapping (Qt) reduces the effect of spontaneous polarization (Ps) in HfO2 based FeFET. Rec... [more] | SDM2020-49 pp.1-2 |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-14 14:40 |
Ehime | Ehime Prefecture Gender Equality Center | Ferroelectric FET-based Parallel Product-Sum Operation Neuromorphic Circuits Koki Kamimura, Susumu Nohmi, Ken Takeuchi (Chuo Univ.) ICD2019-31 IE2019-37 |
In recent years, Moore’s Law which has supported the improvement of semiconductor performance is coming to an end. There... [more] | ICD2019-31 IE2019-37 pp.13-17 |
| SDM | 2019-10-23 15:40 |
Miyagi | Niche, Tohoku Univ. | Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56 |
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigat... [more] | SDM2019-56 pp.17-20 |
| SDM | 2019-01-29 13:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique Tadashi Yamaguchi, Tiantian Zhang, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas) SDM2018-86 |
Highly reliable ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) film with Al nanoclusters embedded by sub-monolayer doping techniq... [more] | SDM2018-86 pp.21-26 |
| ICD (Workshop) |
2010-08-16 - 2010-08-18 |
Overseas | Ho Chi Minh City University of Technology | [Invited Talk]
Recent FeFET technological progress for FeCMOS logic and FeNAND flash memory applications Shigeki Sakai, Mitsue Takahashi (AIST) |
Ferroelectric-gate field-effect transistors (FeFETs) and their circuit applications are described. The FeFETs with Pt/Sr... [more] | |
[Return to Top Page]