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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MRIS, CPM, ITE-MMS [detail] 2022-10-28
10:05		 Nagano Shinshu Univ.
(Primary: On-site, Secondary: Online)		 Preparation and Evaluation of Molybdenum Oxide for Memristors by Anodic Oxidation Method
Chie Nagaoka, Myo Than Htay, Yoshio Hashimoto (Shinshu Univ.) MRIS2022-14 CPM2022-45		 Molybdenum oxide, which is a potent resistive switching medium of memristors, is prepared by anodic oxidation technique ... [more] MRIS2022-14 CPM2022-45
pp.33-36
OME 2016-10-28
16:40		 Tokyo Kikai-Shinko-Kaikan Bldg. Fabrications of Nano-Pore Flow Structure and Organic Nano-Transistor for Biosensor Application
Kohei Enda, Hiroshi Yamauchi, Masatoshi Sakai, Kazuhiro Kudo (Chiba Univ.) OME2016-46		 Recently, high sensitivity and selectivity sensor researches on the environmental and bio-sensors aiming at application ... [more] OME2016-46
pp.33-37
SDM 2016-06-29
13:30		 Tokyo Campus Innovation Center Tokyo A resistive switching device based on breakdown and local anodic oxidation
Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) SDM2016-38		 We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] SDM2016-38
pp.33-36
OME, SDM 2013-04-25
13:20		 Kagoshima Yakusima Environmental Culture Village Center Fabrication of biotransistors using nanoporous adonic oxide films
Kazuhiro Kudo, Shota Kurosawa, Hiroshi Yamauchi, Shigekazu Kuniyoshi, Masatoshi Sakai (Chiba Univ.) SDM2013-10 OME2013-10		 Porous alumina formed owing to anodic oxidation have highly ordered nanostructures and are expected as various applicati... [more] SDM2013-10 OME2013-10
pp.49-52
ED, MW 2008-01-16
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Surface passivation of GaN using electorchemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-207 MW2007-138		 The oxidation condition of n-GaN by wet chemical process was optimized. The bias voltage for oxidation was decided by cy... [more] ED2007-207 MW2007-138
pp.7-10
ED 2007-06-16
10:10		 Toyama Toyama Univ. Anodic oxidation on n-GaN surface using photoelectrochemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-42		 This paper reports the feasibility of oxidation on n-GaN surface using photoelectrochemical process in a mixed solution ... [more] ED2007-42
pp.61-65
 Results 1 - 6 of 6  /   
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