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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2020-01-31
16:35		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications
Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139		 Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] ED2019-105 MW2019-139
pp.59-64
MW
(2nd)		 2017-06-14
- 2017-06-16		 Overseas KMUTT, Bangkok, Thailand [Short Paper] RF Characteristics of SOTB Devices for GHz Frequency Applications
Van-Trung Nguyen, Koichiro Ishibashi (UEC) 		The paper presents RF characteristics of the 65nm SOTB CMOS devices for 1GHz range. With many superior features such as ... [more]
ICD, MW 2016-03-04
10:15		 Hiroshima Hiroshima University Design Method of Gain-Boosted Small-Signal Amplifiers with Lossless Reciprocal Feedback
Yuji Ito, Shuhei Amakawa (Hiroshima Univ.) MW2015-205 ICD2015-128		 The gain and the stability of a composite amplifier consisting of a core 2-port amplifier (transistor) and a lossless re... [more] MW2015-205 ICD2015-128
pp.181-186
ED 2016-01-20
15:05		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118		 High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] ED2015-118
pp.37-41
MW, ED 2009-01-15
14:50		 Tokyo Kikai-Shinko-Kaikan Bldg High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits
Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179		 InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] ED2008-214 MW2008-179
pp.95-99
ED 2007-11-27
13:55		 Miyagi Tohoku Univ. Research Institute of Electrical Communication Fabrication of ultrafast InP-based HEMTs for MMIC application
Issei Watanabe, Akira Endoh (NICT), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2007-188		 InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] ED2007-188
pp.7-10
 Results 1 - 6 of 6  /   
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