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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED, CPM | 2022-05-27 15:05 |
Online | Online | Single-electron tunneling through multiple-donor QDs in high-concentration co-doped Si nanoscale transistors Taruna Teja Jupalli, Tsutomu Kaneko, Chitra Pandy, Daniel Moraru (Shizuoka Univ.)  ED2022-11 CPM2022-5 SDM2022-18 |
[more] | ED2022-11 CPM2022-5 SDM2022-18 pp.17-20 |
| SDM, ED, CPM | 2013-05-17 11:45 |
Shizuoka | Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. | Electron-tunneling operation of single-dopant-atom transistors at elevated temperature
-- Toward room temperature operation -- Daniel Moraru, Earfan Hamid, Arup Samanta (Shizuoka Univ.), Le The Anh (JAIST), Takeshi Mizuno (Shizuoka Univ.), Hiroshi Mizuta (JAIST/Southampton Univ.), Michiharu Tabe (Shizuoka Univ.) ED2013-28 CPM2013-13 SDM2013-35 |
[more] | ED2013-28 CPM2013-13 SDM2013-35 pp.65-70 |
| SDM, ED | 2013-02-27 15:40 |
Hokkaido | Hokkaido Univ. | Individual Dopant Nature in Si Lateral Nano-pn Junctions Sri Purwiyanti, Arief Udhiarto (Shizuoka Univ./Univ. Indonesia), Roland Nowak (Shizuoka Univ./Warsaw Univ. of Tech.), Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Djoko Hartanto (Univ. Indonesia), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2012-132 SDM2012-161 |
In this work, we report the experimental observation of dopant signature in nanoscale ultra-thin SOI pn junctions. At te... [more] | ED2012-132 SDM2012-161 pp.25-30 |
| ED, SDM | 2012-02-07 14:10 |
Hokkaido | Ab initio Analysis of Electronic States for Single Phosphorus Dopants in Silicon Nanorod Transistors Youhei Kuzuya, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.), Hiroshi Mizuta (JAIST/Univ. of Southampton) ED2011-143 SDM2011-160 |
Dopant-induced fluctuation of MOSFET characteristics along with device miniaturization has been recognized as a serious ... [more] | ED2011-143 SDM2011-160 pp.7-11 |
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| ED, SDM | 2012-02-07 14:35 |
Hokkaido | KFM observation of individual dopant potentials and electron charging Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2011-144 SDM2011-161 |
We utilize Kelvin probe force microscope (KFM) to measure surface potential of thin channel of nanoscale field effect tr... [more] | ED2011-144 SDM2011-161 pp.13-18 |
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| SDM, ED | 2011-02-24 10:20 |
Hokkaido | Hokkaido Univ. | Single-Electron Transfer between Two Donors in Thin Nanoscale Silicon Transistors Daniel Moraru, Earfan Hamid, Juli Cha Tarido, Sakito Miki, Ryusuke Nakamura, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.) ED2010-202 SDM2010-237 |
[more] | ED2010-202 SDM2010-237 pp.57-62 |
| SDM, ED | 2011-02-24 11:10 |
Hokkaido | Hokkaido Univ. | Current Intermittency in SOI-FETs under Light Illumination Arief Udhiarto, Daniel Moraru, Ryusuke Nakamura, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.) ED2010-204 SDM2010-239 |
We investigate the effects of continuous light illumination on single-electron transport via quantum dots in silicon-on-... [more] | ED2010-204 SDM2010-239 pp.67-72 |
| ED, SDM | 2010-07-01 11:50 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Si single-dopant devices and their characterization Michiharu Tabe, Daniel Moraru, Earfan Hamid, Miftahul Anwar, Arief Udhiarto, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno (Shizuoka Univ.) ED2010-80 SDM2010-81 |
[more] | ED2010-80 SDM2010-81 pp.131-136 |
| SDM, CPM, ED | 2010-05-13 15:25 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Charging phenomena of a single electron in P-doped Si SOI-MOSFETs Earfan Hamid, Juli ChaTarido, Sakito Miki, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.) ED2010-21 CPM2010-11 SDM2010-21 |
[more] | ED2010-21 CPM2010-11 SDM2010-21 pp.23-26 |
| SDM, CPM, ED | 2010-05-13 15:50 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Single Photon Detection in Single Dot and Multi Dot Channel Phosphorus-Doped SOI-FET Arief Udhiarto, Daniel Moraru, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno, Michiharu Tabe (Shiuzoka Univ.) ED2010-22 CPM2010-12 SDM2010-22 |
[more] | ED2010-22 CPM2010-12 SDM2010-22 pp.27-31 |
| ED, SDM | 2008-01-30 14:45 |
Hokkaido | Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251 |
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] | ED2007-240 SDM2007-251 pp.17-22 |
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| SDM, ED | 2007-02-02 13:20 |
Hokkaido | Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays Daniel Moraru (Shizuoka Univ.), Yukinori Ono (ＮＴＴ), Hiroshi Inokawa, Kiyohito Yokoi, Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) |
[more] | ED2006-255 SDM2006-243 pp.83-88 |
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| ED, CPM, SDM | 2006-05-19 15:00 |
Aichi | VBL, Toyohashi University of Technology | Tunneling current oscillations in Si/SiO2/Si structures Daniel Moraru, Daisuke Nagata (Shizuoka Univ.), Seiji Horiguchi (Akita Univ.), Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) |
[more] | ED2006-40 CPM2006-27 SDM2006-40 pp.113-117 |
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