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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2017-10-26
09:30		 Miyagi Niche, Tohoku Univ. [Invited Talk] Utilization of Big Data for Innovation in Semiconductor Memory Manufacturing -- Comprehensive Big-Data-Based Monitoring System for Yield Analysis in Semiconductor Manufacturing --
Hiroshi Akahori (Toshiba Memory), Kouta Nakata, Ryohei Orihara, Yoshiaki Mizuoka, Kentaro Takagi (Toshiba), Kenichi Kadota, Takaharu Nishimura, Yukako Tanaka, Hidetaka Eguchi (Toshiba Memory) SDM2017-55		 In this work, we focus on yield analysis task where engineers identify the cause of failure from wafer failure map patte... [more] SDM2017-55
pp.31-33
SDM 2010-10-21
17:40		 Miyagi Tohoku University Low-temperature crystallization of thin-film amorphous silicon
Yoko Iwakaji, Jun Hirota, Moto Yabuki, Hirokazu Ishida, Wakana Kaneko, Ichiro Mizushima, Hiroshi Akahori (Toshiba) SDM2010-158		 Polysilicon are frequently used in various manufacture censor, solar cell and liquid crystal. In recent years, It comes ... [more] SDM2010-158
pp.31-34
SDM 2009-10-30
13:00		 Miyagi Tohoku University Recovery from Reactive Ion Etching Damage in SiO2 Films
Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.) SDM2009-129		 As the MOS device shrinkage progress, the influence of RIE(Reactive Ion Etching) damage becomes remarkable. Especially, ... [more] SDM2009-129
pp.51-56
SDM 2009-10-30
14:00		 Miyagi Tohoku University A study on improvement of electrical characteristics for low temperature SiO2 film
Hidenobu Nagashima, Hiroshi Akahori (TOSHIBA) SDM2009-131		 The metal gate electrode is paid to attention as a low resistivity material in the MOS transistor as scaling progresses.... [more] SDM2009-131
pp.63-67
SDM 2008-10-10
15:45		 Miyagi Tohoku Univ. Influence of B and P dopants on SiO2 film characteristics
Satoshi Nagashima, Hiroshi Akahori (Toshiba) SDM2008-166		 In general, the silicon material that has doped impurities such as phosphorus, boron, and arsenic to the diffusion and t... [more] SDM2008-166
pp.63-68
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