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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, LQE, CPM |
2015-11-26 10:55 |
Osaka |
Osaka City University Media Center |
Growth of AlN with annealing on different misoriented c-plane sapphire Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2015-69 CPM2015-104 LQE2015-101 |
AlN is promising for applications in the deep ultraviolet region because of its wide direct band-gap and excellent therm... [more] |
ED2015-69 CPM2015-104 LQE2015-101 pp.5-9 |
ED, MW |
2014-01-17 13:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Low-Power, Linear Driver Module for InP MZM Hitoshi Wakita, Munehiko Nagatani, Miwa Mutoh, Satoshi Tsunashima, Hiroyuki Fukuyama, Hideyuki Nosaka, Norihide Kashio, Minoru Ida, Kenji Kurishima (NTT) ED2013-130 MW2013-195 |
In this paper, the characteristics of InP MZM driver module are presented. The linear driver IC that was implemented in... [more] |
ED2013-130 MW2013-195 pp.115-120 |
CPM, LQE, ED |
2013-11-29 11:25 |
Osaka |
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Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2013-80 CPM2013-139 LQE2013-115 |
AlN has attracted attention for applications in the deep ultraviolet region, because of its wide direct band-gap and exc... [more] |
ED2013-80 CPM2013-139 LQE2013-115 pp.75-78 |
SDM, ED |
2009-06-25 12:30 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission Toshihiro Itoh, Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata (NTT) ED2009-80 SDM2009-75 |
We experimentally studied the polarization mode dispersion (PMD) tolerance of an feed-forward equalizer (FFE) electronic... [more] |
ED2009-80 SDM2009-75 pp.133-136 |
MW, ED |
2009-01-15 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver Hiroyuki Fukuyama, Toshihiro Itoh, Tomofumi Furuta, Kenji Kurishima, Masami Tokumitsu, Koichi Murata (NTT) ED2008-213 MW2008-178 |
We have developed a two-channel automatic-gain-control transimpedance amplifier IC by using InP heterojunction bipolar t... [more] |
ED2008-213 MW2008-178 pp.89-94 |
LQE, OPE, OCS |
2007-11-02 16:10 |
Fukuoka |
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20.4-Tb/s (204 x 111 Gb/s) Transmission using 111-Gb/s CSRZ-DQPSK Format and Bandwidth-Maximized Hybrid Optical Amplification Technology Hiroji Masuda, Akihide Sano, Takayuki Kobayashi, Eiji Yoshida, Yutaka Miyamoto, Yoshinori Hibino, Takashi Yamada, Tomofumi Furuta, Hiroyuki Fukuyama (NTT) OCS2007-71 OPE2007-126 LQE2007-112 |
It is crucial to establish the high-speed and large-capacity transmission system technology that can support a high-spee... [more] |
OCS2007-71 OPE2007-126 LQE2007-112 pp.155-159 |
NS, OCS (Joint) |
2007-01-26 15:40 |
Miyazaki |
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14 Tb/s transmission experiment using 111 Gb/s/ch CSRZ-DQPSK format and extended L-band EDFAs Akihide Sano, Hiroji Masuda, Yoshiaki Kisaka, Shigeki Aisawa, Eiji Yoshida, Yutaka Miyamoto, Takashi Yamada, Tomofumi Furuta, Hiroyuki Fukuyama (NTT) OCS2006-88 |
In longhaul WDM transmission systems, 100-Gb/s-class high-speed transmission technologies have lately attracted consider... [more] |
OCS2006-88 pp.79-84 |
ED, MW |
2006-01-18 14:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata, Kenji Kurishima, Norihide Kashio, Takatomo Enoki, Hirohiko Sugahara (NTT PH Labo.) |
[more] |
ED2005-194 MW2005-148 pp.13-18 |
OCS, OPE, LQE |
2005-11-03 17:25 |
Fukuoka |
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100-GHz Optoelectric Integrated Circuits using InP HBTs and a UTC-PD Norihide Kashio, Kenji Kurishima, Kimikazu Sano, Minoru Ida, Noriyuki Watanabe, Hiroyuki Fukuyama, Hirohiko Sugahara, Masami Tokumitsu, Takatomo Enoki (NTT) |
We have monolithically integrated InP HBTs and a UTC-PD by a non-selective regrowth technique. The HBT shows an ft of 26... [more] |
OCS2005-56 OPE2005-86 LQE2005-94 pp.43-46 |
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