|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED (Workshop) |
2012-06-29 10:15 |
Okinawa |
Okinawa Seinen-kaikan |
Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel Min-Chul Sun (SNU and SEC), Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (SNU) |
A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is... [more] |
|
ED, SDM |
2010-06-30 14:25 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
A New Cone-Type 1T DRAM Cell Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Jung Hoon Lee, Yoon Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-55 SDM2010-56 |
[more] |
ED2010-55 SDM2010-56 pp.23-25 |
ED, SDM |
2010-07-02 15:35 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect Yoon Kim, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-99 SDM2010-100 |
[more] |
ED2010-99 SDM2010-100 pp.217-220 |
SDM, ED |
2009-06-26 11:45 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device. Seongjae Cho, Jung Hoon Lee, Yun Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2009-101 SDM2009-96 |
[more] |
ED2009-101 SDM2009-96 pp.219-222 |
SDM, ED |
2008-07-10 09:30 |
Hokkaido |
Kaderu2・7 |
3-dimensional Terraced NAND(3D TNAND) Flash Memory Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-56 SDM2008-75 |
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enoug... [more] |
ED2008-56 SDM2008-75 pp.85-88 |
SDM, ED |
2008-07-10 10:15 |
Hokkaido |
Kaderu2・7 |
Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL) Seongjae Cho, Il Han Park, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-58 SDM2008-77 |
Recently, various 3-D nonvolatile memory (NVM) devices have been researched for improving the degree of integration. NVM... [more] |
ED2008-58 SDM2008-77 pp.95-99 |
SDM, ED |
2008-07-11 11:20 |
Hokkaido |
Kaderu2・7 |
Implementation of Channel Thermal Noise Model in CMOS RFIC Design Jongwook Jeon, Ickhyun Song, Hyungcheol Shin (Seoul National Univ.) ED2008-84 SDM2008-103 |
Abstract - In this paper, a simple channel thermal noise model for short-channel MOSFET is applied to the RF circuit des... [more] |
ED2008-84 SDM2008-103 pp.239-242 |
SDM, ED |
2008-07-11 15:05 |
Hokkaido |
Kaderu2・7 |
24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization Ickhyun Song, Hakchul Jung, Hee-Sauk Jhon, Minsuk Koo, Hyungcheol Shin (Seoul National Univ.) ED2008-96 SDM2008-115 |
2-stage 24 GHz low noise amplifier (LNA) was designed using 65 nm RF CMOS technology. Since conventional topology with i... [more] |
ED2008-96 SDM2008-115 pp.301-304 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|