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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, CPM, ED |
2020-11-26 15:30 |
Online |
Online |
Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] |
ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
LQE, CPM, ED |
2020-11-27 11:20 |
Online |
Online |
Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67 |
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] |
ED2020-16 CPM2020-37 LQE2020-67 pp.60-62 |
CPM, LQE, ED |
2016-12-12 16:10 |
Kyoto |
Kyoto University |
AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80 |
We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] |
ED2016-64 CPM2016-97 LQE2016-80 pp.35-39 |
CPM |
2007-11-17 14:40 |
Niigata |
Nagaoka University of Technology |
Electrical properties of ZnSnAs2 thin films grown by MBE Joel T. Asubar, Tadasuke Yokoyama, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) CPM2007-125 |
Ternary ZnSnAs2 thin films were grown on n-type and semi-insulating (001) InP substrates by molecular beam epitaxy using... [more] |
CPM2007-125 pp.103-107 |
CPM |
2007-11-17 15:05 |
Niigata |
Nagaoka University of Technology |
MBE growth and low-temperature thermal annealing of ferromagnetic semiconductor (Ga,Mn)As/Zn-doped-GaAs superlattice structures Hisayuki Nakagawa, Joel T. Asubar, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) CPM2007-126 |
We prepared the superlattice (SL) structure of ferromagnetic semiconductor (Ga,Mn)As and p-type GaAs spacer layer by MBE... [more] |
CPM2007-126 pp.109-113 |
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