| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, CPM, LQE | 2021-11-26 16:00 |
Online | Online | Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.)  ED2021-34 CPM2021-68 LQE2021-46 |
(To be available after the conference date) [more] | ED2021-34 CPM2021-68 LQE2021-46 pp.87-90 |
| ED, MW | 2020-01-31 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132 |
Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] | ED2019-98 MW2019-132 pp.25-28 |
| SSS | 2018-12-18 13:50 |
Tokyo | Verification of the Fail-Safe Interlock System for Pneumatic Drive Systems Masatoshi Ino, Masanobu Chiba, Kaoru Mitsuhashi, Osamu Ichikawa, Keigo Hara (PTU), Tadashi Ishizuka (Sanwa Koki), Tomohiro Sasaki (NITE), Mizuho Nakamura (PTU) SSS2018-26 |
he pneumatic drive system as used in this study is used in various fields as high-output equipment utilizing compressed ... [more] | SSS2018-26 pp.5-8 |
|
| SSS | 2017-12-19 13:35 |
Tokyo | Design of the Interlock System in the Pneumatic System Ⅱ Masatoshi Ino, Tomohiro Sasaki, Kaoru Mitsuhashi (PTU), Tadashi Ishizuka (Sanwa Koki co., LTD), Keigo Hara, Osamu Ichikawa, Masanobu Chiba, Mizuho Nakamura (PTU) SSS2017-26 |
Various high-output components composing a pneumatic system are widely used in various fields. However, it is possible t... [more] | SSS2017-26 pp.5-8 |
|
| SDM | 2014-01-29 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137 |
riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] | SDM2013-137 pp.9-12 |
| SDM | 2014-01-29 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and Vth Tunability S. H. Kim, Masafumi Yokoyama, Ryosho Nakane (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-144 |
[more] | SDM2013-144 pp.39-42 |
| SDM | 2013-06-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50 |
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] | SDM2013-50 pp.33-37 |
| PRMU, SP | 2012-02-10 16:30 |
Miyagi | Telephony Speech Phrasing based on Breath Event Detection Takashi Fukuda, Osamu Ichikawa, Masafumi Nishimura (IBM Japan) PRMU2011-238 SP2011-153 |
In the ASR technology for call center conversations, the system usually divides an input signal into separate utterances... [more] | PRMU2011-238 SP2011-153 pp.243-248 |
|
[Return to Top Page]