|
|
|
|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
|
| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
|
| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| KBSE |
2024-01-24
09:10 |
Kagoshima |
(Primary: On-site, Secondary: Online) |
Datetime Feature Recommendation System by Using Data Column Names
Satoshi Masuda, Tomohiro Takeda (TCU)  KBSE2023-58 |
Analysis to gain new knowledge from huge amounts of data is called data science, and its widespread use is now socially ... [more] |
KBSE2023-58
pp.43-48 |
| MW, ED |
2015-01-16
10:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
X-Ku wide-bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE
Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Naoya Okamoto, Masaru Sato, Satoshi Masuda, Keiji Watanabe (Fujitsu Lab.) ED2014-127 MW2014-191 |
[more] |
ED2014-127 MW2014-191
pp.59-63 |
| LQE, ED, CPM |
2014-11-28
13:15 |
Osaka |
|
Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu) ED2014-90 CPM2014-147 LQE2014-118 |
We have investigated the effect of moisture on current collapse of GaN high electron mobility transistor (GaN-HEMT) when... [more] |
ED2014-90 CPM2014-147 LQE2014-118
pp.81-84 |
| CPM, LQE, ED |
2010-11-11
16:50 |
Osaka |
|
High-Power GaN-HEMT for Millimeter-Wave Amplifier
Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) ED2010-153 CPM2010-119 LQE2010-109 |
[more] |
ED2010-153 CPM2010-119 LQE2010-109
pp.51-54 |
| MW |
2009-09-25
15:15 |
Tokyo |
Univ. of Electro-Communications |
C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE
Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86 |
In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band pow... [more] |
MW2009-86
pp.73-78 |
| MW, ED |
2009-01-16
09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183 |
[more] |
ED2008-218 MW2008-183
pp.113-118 |
| SDM, R, ED |
2007-11-16
15:20 |
Osaka |
|
Degradation-Mode Analysis for Highly Reliable GaN-HEMT
Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.) R2007-51 ED2007-184 SDM2007-219 |
[more] |
R2007-51 ED2007-184 SDM2007-219
pp.27-31 |
| MW, ED |
2005-01-17
15:30 |
Tokyo |
|
[Special Talk]
A Report on the 34th European Microwave Conference
Tomohiro Seki (NTT), Satoshi Masuda (Fujitsu Lab.), Tamotsu Nishino (Mitsubishi Electric), Atsushi Sanada (Yamaguchi Univ.), Akifumi Hirata (ATR), Kunihiro Kawai (NTT DOCOMO), Kouichi Kimura (UEC) |
[more] |
ED2004-211 MW2004-218
pp.43-51 |
|
|
|
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|