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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| PRMU, IPSJ-CVIM, IPSJ-DCC, IPSJ-CGVI | 2023-11-16 15:10 |
Tottori | (Primary: On-site, Secondary: Online) |
Reverse storyboarding for video understanding Taiki Nakamura, Masamitsu Nishi, Masayuki Kashima, Shinya Fukumoto, Mutsumi Watanabe (Kagoshima Univ.)  PRMU2023-19 |
[more] | PRMU2023-19 pp.22-27 |
| CPM, ED, LQE | 2022-11-25 11:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Growth temperature dependence of semipolar {11-22} AlInN/GaInN Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.) ED2022-42 CPM2022-67 LQE2022-75 |
AlInN alloys are promising materials for GaN-based electronic and optical devices. In this study, AlInN layers with a th... [more] | ED2022-42 CPM2022-67 LQE2022-75 pp.81-84 |
| ED, CPM, LQE | 2021-11-25 16:55 |
Online | Online | Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-27 CPM2021-61 LQE2021-39 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2021-27 CPM2021-61 LQE2021-39 pp.59-62 |
| LQE, CPM, ED | 2020-11-26 11:15 |
Online | Online | Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.) ED2020-4 CPM2020-25 LQE2020-55 |
In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor d... [more] | ED2020-4 CPM2020-25 LQE2020-55 pp.13-16 |
| CCS | 2018-11-22 13:25 |
Hyogo | Kobe Univ. | On characteristics of an asynchronous cellular automaton reservoir Taiki Naka (Kyoto Sangyo Univ.), Hiroyuki Torikai (Hosei Univ.) CCS2018-34 |
[more] | CCS2018-34 pp.7-10 |
| CCS | 2017-11-10 11:25 |
Osaka | Osaka Univ. | On a Classification Function of an Asynchronous Cellular Automaton Spiking Neural Network Taiki Naka, Hiroyuki Torikai (Kyoto Sangyo Univ.) CCS2017-29 |
In this paper, we consider a spike neural network consisting of asynchronous cellular automaton neurons, which has trans... [more] | CCS2017-29 pp.45-48 |
| CCS | 2016-11-05 10:00 |
Kyoto | Kyoto Sangyo Univ. (Musubiwaza Bldg.) | Basic conditioning learning in a multi-compartment neuron model based on asynchronous bifurcation processor Taiki Naka, Hiroyuki Torikai (Kyoto Sangyo Univ.) CCS2016-41 |
[more] | CCS2016-41 pp.55-58 |
| SR, SRW (Joint) |
2015-10-27 09:30 |
Tokyo | KKE | [Technology Exhibit]
Highly Efficient Environment Aware Wireless Sensor Network Shunsuke Takagi, Taiki Nakayama, Takeo Fujii (UEC), Takumi Kimura, Osamu Takyu (Shinshu Univ.), Mai Ohta (Fukuoka Univ.) SR2015-57 SRW2015-38 |
[more] | SR2015-57 SRW2015-38 pp.41-42 |
| RCC, ASN, RCS, NS, SR (Joint) |
2015-07-30 10:30 |
Nagano | JA Naganoken Bldg. | [Poster Presentation]
Parameter Control Method for Physical Wireless Parameter Conversion Sensor Networks based on Estimated Mixture Distribution Taiki Nakayama, Takeo Fujii (UEC), Osamu Takyu (Shinshu Univ.), Mai Ohta (Fukuoka Univ.) RCC2015-33 NS2015-53 RCS2015-116 SR2015-34 ASN2015-43 |
We have proposed a physical wireless parameter conversion method for Wireless Sensor Networks (WSNs). In this method, ea... [more] | RCC2015-33 NS2015-53 RCS2015-116 SR2015-34 ASN2015-43 pp.91-96(RCC), pp.95-100(NS), pp.93-98(RCS), pp.109-114(SR), pp.131-136(ASN) |
| SDM | 2011-10-20 14:20 |
Miyagi | Tohoku Univ. (Niche) | Reduction of Random Telegraph Noise with Broad Channel MOSFET Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Hiroaki Matsuoka, Taiki Nakazawa, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-98 |
Drastic reduction of random telegraph noise (RTN) is demonstrated due to the broad channel MOSFET structure. We found th... [more] | SDM2011-98 pp.5-9 |
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