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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, R, ED |
2007-11-16 14:15 |
Osaka |
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High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217 |
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] |
R2007-49 ED2007-182 SDM2007-217 pp.19-22 |
CPM, ED, LQE |
2007-10-12 11:15 |
Fukui |
Fukui Univ. |
Surface control of AlGaN/GaN strcutures Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71 |
We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high te... [more] |
ED2007-170 CPM2007-96 LQE2007-71 pp.73-76 |
MW, ED |
2007-01-19 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE) |
Schottky wrap gate (WPG) controlled AlGaN/GaN nanowire FETs were fabricated and characterized. The devices with channel ... [more] |
ED2006-232 MW2006-185 pp.179-182 |
ED, SDM |
2006-01-27 10:55 |
Hokkaido |
Hokkaido Univ. |
Investigation of GaAs-based single electron device for hexagnal BDD single electron logic curcuit Yuji Abe, Tatsuya Nakamura, Takahiro Tamura, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa (Hokkaido Univ) |
(To be available after the conference date) [more] |
ED2005-235 SDM2005-247 pp.21-26 |
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