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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2009-06-19 15:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete)  SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] | SDM2009-38 pp.67-70 |
| SDM | 2008-12-05 13:15 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | [Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188 |
[more] | SDM2008-188 pp.21-25 |
| ICD, SDM | 2008-07-17 09:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) SDM2008-128 ICD2008-38 |
Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher ... [more] | SDM2008-128 ICD2008-38 pp.1-6 |
| ICD, SDM | 2008-07-18 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabrication of Ultra Shallow Junction and Improvement of Metal Gate High-k CMOS Performance by FSP-FLA (Flexibly-Shaped-Pulse Flash-Lamp-Annealing) Technology Takashi Onizawa, Shinichi Kato, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (selete) SDM2008-146 ICD2008-56 |
We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ... [more] | SDM2008-146 ICD2008-56 pp.103-108 |
| SDM | 2008-06-10 10:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru -- Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-50 |
2.5nm-thick HfSiON layers were deposited on thermally-grown SiO2 in the thickness range of 1 to 6nm or 0.7nm-thick SiON ... [more] | SDM2008-50 pp.47-52 |
| SDM | 2008-06-10 11:20 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000º... [more] | SDM2008-52 pp.59-64 |
| SDM | 2006-06-21 14:55 |
Hiroshima | Faculty Club, Hiroshima Univ. | Characterization of open volumes in high-k gate dielectrics by using monoenergetic positron beams Akira Uedono, T. Otsuka, K. Ito, K. Shiraishi, Kikuo Yamabe (Univ. of Tsukuba), Seiichi Miyazaki (Hiroshima Univ.), Naoto Umezawa, Toyohiro Chikyow (NIMS), Toshiyuki Ohdaira, R. Suzuki (AIST), Seiji Inumiya, Satoshi Kamiyama (Selete), Yasushi Akasaka (TEL), Yasuo Nara (Selete), Keisaku Yamada (Waseda Uni.) |
[more] | SDM2006-46 pp.25-30 |
| SDM | 2006-06-21 16:00 |
Hiroshima | Faculty Club, Hiroshima Univ. | Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS) |
[more] | SDM2006-48 pp.37-41 |
| SDM | 2006-06-22 13:10 |
Hiroshima | Faculty Club, Hiroshima Univ. | Interfacial reaction in HfO2/SiO2/Si(001) during O2 anneal observed by high-resolution RBS Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ.), Masashi Uematsu (NTT BRL), Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.) |
[more] | SDM2006-59 pp.99-102 |
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