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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED (Workshop) |
2012-06-27 11:00 |
Okinawa |
Okinawa Seinen-kaikan |
Electrical characteristics of IGBT using a field stop trench gate structure Ey Goo Kang (Far East Univ.), Eun Sik Jung (Maplesemiconductor Incorporated), Yong Tae Kim (KIST) |
[more] |
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SDM, ED (Workshop) |
2012-06-27 11:15 |
Okinawa |
Okinawa Seinen-kaikan |
Optimization and characterization of 600V super junction power MOSFET using a deep trench structure Yong Tae Kim (KIST), Eun Sik Jung (Maplesemiconductor Inc.), Ey Goo Kang (Far East Univ.) |
Recently, Power MOSFET has been intensively investigated as voltage-driven devices for the applications of large power s... [more] |
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SDM, ED (Workshop) |
2012-06-27 14:30 |
Okinawa |
Okinawa Seinen-kaikan |
Comparison of thin film properties of WN diffusion barrier prepared by atomic layer deposition using metal organic and metal halide reactant gases Yeong Hyeon Hwang (KIST), Won-Ju Cho (Kwangwoon Univ.), Yong Tae Kim (KIST) |
[more] |
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ED, SDM |
2010-06-30 16:55 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
A design of Novel IGBT with Oblique Trench Gate Juhyun Oh, Dae Hwan Chun (Koria Univ.), Eui Bok Lee (Koria Univ./KIST), Young Hwan Kim, Chun Keun Kim (KIST), Byeong Kwon Ju, Man Young Sung (Koria Univ.), Yong Tae Kim (KIST) ED2010-64 SDM2010-65 |
[more] |
ED2010-64 SDM2010-65 pp.57-59 |
ED, SDM |
2010-06-30 17:10 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects Yong Tae Kim (KIST), Eui Bok Lee (Koria Univ./KIST), Young Hwan Kim, Chun Keun Kim (KIST), Byeong Kwon Ju (Koria Univ.) ED2010-65 SDM2010-66 |
[more] |
ED2010-65 SDM2010-66 pp.61-63 |
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