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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED |
2009-06-25 12:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) ED2009-86 SDM2009-81 |
[more] |
ED2009-86 SDM2009-81 pp.157-160 |
OME, SDM |
2009-04-24 15:10 |
Saga |
AIST Kyushu-center |
Investigation of SAM treatment on gate insulator in solution processed organic thin-film transistor Yoshinori Horii (PRI, AIST/Graduate School of Eng., Tottori Univ.), Mitsuhiro Ikawa, Koichi Sakaguchi, Masayuki Chikamatsu, Yuji Yoshida, Reiko Azumi (PRI, AIST), Hiroshi Mogi (Japan Chemical Innovation Inst./Shin-Etsu Chemical), Masahiko Kitagawa, Hisatoshi Konishi (Graduate School of Eng., Tottori Univ.), Kiyoshi Yase (PRI, AIST) SDM2009-3 OME2009-3 |
(To be available after the conference date) [more] |
SDM2009-3 OME2009-3 pp.9-14 |
SDM |
2008-10-10 16:15 |
Miyagi |
Tohoku Univ. |
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167 |
Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] |
SDM2008-167 pp.69-74 |
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