Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ICD, ITE-IST [detail] |
2024-08-05 13:00 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Memorial Lecture]
Simulation Method for the Mean Free Path of Semiconductor Nanosheets with Surface Roughness Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2024-30 ICD2024-20 |
In semiconductor nanosheets, as the channel becomes thinner, the interface roughness scattering increases and the carrie... [more] |
SDM2024-30 ICD2024-20 pp.21-24 |
SDM |
2023-11-09 10:30 |
Tokyo |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
SISPAD 2023 Review Hajime Tanaka (Osaka Univ.) SDM2023-62 |
The 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023), which focuses on t... [more] |
SDM2023-62 pp.1-6 |
SDM |
2023-11-09 14:00 |
Tokyo |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Quantum Transport Simulation for Analysis of Surface Roughness Scattering in Semiconductor Nanosheet Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2023-65 |
A numerical method is proposed to calculate the transport mean free path of single-mode semiconductor nanosheets with su... [more] |
SDM2023-65 pp.10-15 |
PN |
2022-11-07 14:35 |
Kochi |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Spot size converter having two stories employing anisotropic etching process Hajime Tanaka (SEI), Ryuji Yamabi (SEDI), Takamitsu Kitamura (SEDI/SEI), Hotino Kazuhiko (SEDI), Ishikawa Tsutomu (SEI), Mitsuru Ekawa (SEDI/SEI) PN2022-25 |
Coherent technology has been widely used from long haul to metro network. InP is a material having unique characteristic... [more] |
PN2022-25 pp.22-27 |
SDM |
2020-11-20 15:40 |
Online |
Online |
[Invited Talk]
NEGF simulation of band-to-band tunneling in van der Waals heterostructures Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka (Osaka Univ) SDM2020-33 |
Inter-layer band-to-band tunneling is investigated by using the nonequilibrium Green function (NEGF) method. After stud... [more] |
SDM2020-33 pp.52-57 |
SDM |
2018-11-09 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Modeling of Electron Transport in 4H-SiC MOS Inversion Layers Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71 |
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] |
SDM2018-71 pp.35-40 |
SDM, EID |
2014-12-12 10:00 |
Kyoto |
Kyoto University |
Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108 |
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] |
EID2014-13 SDM2014-108 pp.1-6 |
SDM, EID |
2014-12-12 10:15 |
Kyoto |
Kyoto University |
Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109 |
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] |
EID2014-14 SDM2014-109 pp.7-11 |
SDM |
2013-12-13 16:40 |
Nara |
NAIST |
Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131 |
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] |
SDM2013-131 pp.91-96 |
EID, ITE-IDY, SID-JC [detail] |
2013-07-25 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Progress in Luminous Array Film with Plasma Tube Technology for Seamless Tilling Super-large-area Display. Terukazu Kosako, Bingang Guo, Hajime Tanaka, Hitoshi Hirakawa, Kenji Awamoto, Tsutae Shinoda (Shinoda Plasma) |
[more] |
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