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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-11-09
(Primary: On-site, Secondary: Online)
[Invited Talk] SISPAD 2023 Review
Hajime Tanaka (Osaka Univ.) SDM2023-62
The 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023), which focuses on t... [more] SDM2023-62
SDM 2023-11-09
(Primary: On-site, Secondary: Online)
[Invited Talk] Quantum Transport Simulation for Analysis of Surface Roughness Scattering in Semiconductor Nanosheet
Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2023-65
A numerical method is proposed to calculate the transport mean free path of single-mode semiconductor nanosheets with su... [more] SDM2023-65
PN 2022-11-07
(Primary: On-site, Secondary: Online)
[Invited Talk] Spot size converter having two stories employing anisotropic etching process
Hajime Tanaka (SEI), Ryuji Yamabi (SEDI), Takamitsu Kitamura (SEDI/SEI), Hotino Kazuhiko (SEDI), Ishikawa Tsutomu (SEI), Mitsuru Ekawa (SEDI/SEI) PN2022-25
Coherent technology has been widely used from long haul to metro network. InP is a material having unique characteristic... [more] PN2022-25
SDM 2020-11-20
Online Online [Invited Talk] NEGF simulation of band-to-band tunneling in van der Waals heterostructures
Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka (Osaka Univ) SDM2020-33
Inter-layer band-to-band tunneling is investigated by using the nonequilibrium Green function (NEGF) method. After stud... [more] SDM2020-33
SDM 2018-11-09
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Modeling of Electron Transport in 4H-SiC MOS Inversion Layers
Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] SDM2018-71
SDM, EID 2014-12-12
Kyoto Kyoto University Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] EID2014-13 SDM2014-108
SDM, EID 2014-12-12
Kyoto Kyoto University Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] EID2014-14 SDM2014-109
SDM 2013-12-13
Nara NAIST Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] SDM2013-131
EID, ITE-IDY, SID-JC [detail] 2013-07-25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Progress in Luminous Array Film with Plasma Tube Technology for Seamless Tilling Super-large-area Display.
Terukazu Kosako, Bingang Guo, Hajime Tanaka, Hitoshi Hirakawa, Kenji Awamoto, Tsutae Shinoda (Shinoda Plasma)
 Results 1 - 9 of 9  /   
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