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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2012-02-07
16:55		 Hokkaido   Light emission from Silicon quantum-well by tunneling current injection
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) ED2011-149 SDM2011-166		 We demonstrated electron tunneling spectroscopy of thin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effec... [more] ED2011-149 SDM2011-166
pp.41-46
ED, SDM 2012-02-08
11:25		 Hokkaido   Stochastic resonance using a steep-subthreshold-swing transistor
Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2011-154 SDM2011-171		 We demonstrate stochastic resonance (SR) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) wi... [more] ED2011-154 SDM2011-171
pp.71-76
SDM, ED 2011-02-24
11:35		 Hokkaido Hokkaido Univ. Stochastic resonance using single electrons
Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2010-205 SDM2010-240		 We demonstrate stochastic resonance (SR) with single electrons (SEs) using nanoscale metal-oxide-semiconductor field-eff... [more] ED2010-205 SDM2010-240
pp.73-77
SDM, ED 2008-07-10
09:00		 Hokkaido Kaderu２・７ Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi (NTT) ED2008-62 SDM2008-81		  [more] ED2008-62 SDM2008-81
pp.119-124
ED, SDM 2008-01-31
12:05		 Hokkaido   Single-electron circuit for stochastic data processing using nano-MOSFETs
Katsuhiko Nishiguchi, Akira Fujiwara (NTT BRL) ED2007-251 SDM2007-262		 A MOSFET-based circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly pas... [more] ED2007-251 SDM2007-262
pp.75-79
ED, SDM 2007-06-25
13:00		 Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] Room-temperature-operating single-electron devices using silicon nanowire MOSFET
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) 		In this paper, we report the development of devices for single-electron transfer and detection at room temperature, usin... [more]
ED, SDM 2006-01-26
15:30		 Hokkaido Hokkaido Univ. [Invited Talk] Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature -- Fabrication using SOI and measurements of its characteristics --
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa (NTT), Yasuo Takahashi (Hokkaido Univ.) 		A single-electron-based circuit, in which electrons are transferred one-by-one with a turnstile and subsequently detecte... [more] ED2005-228 SDM2005-240
pp.23-28
 Results 1 - 7 of 7  /   
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