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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2023-01-27 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network Shigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata (SEI)  ED2022-94 MW2022-153 |
[more] | ED2022-94 MW2022-153 pp.40-43 |
| SeMI, IPSJ-MBL, IPSJ-DPS, IPSJ-ITS | 2021-05-27 17:15 |
Online | Online | Developing a Close-Contact Detection System Using a Single Camera for Sports Considering Occlusion Ryosuke Hasegawa, Akira Uchiyama, Issei Ogasawara (Osaka Univ.), Daigo Muramatsu (Seikei Univ.), Fumio Okura, Hiromi Takahata, Ken Nakata, Teruo Higashino (Osaka Univ.) SeMI2021-5 |
[more] | SeMI2021-5 pp.21-26 |
| SITE | 2019-12-06 13:00 |
Kanagawa | Analysis of an intermediate layer for perceptual hashing using a convolutional neural network Ken Nakatani, Meng Zhaoxiong, Tetsuya Morizumi, Hirotsugu Kinoshita (Kanagawa Univ.) SITE2019-80 |
This research aims to improve the digital watermark technology that embeds evidence information by using content redunda... [more] | SITE2019-80 pp.1-6 |
|
| ED, MW | 2018-01-25 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Delay Time Analysis of InAlN-MIS-HEMTs on Si Substrates Tomohiro Yoshida (SEI), Isao Makabe (NICT), Isao Makabe (SEI), Issei Watanabe, Akifumi Kasamatsu (NICT), Ken Nakata, Kazutaka Inoue (SEI) ED2017-94 MW2017-163 |
[more] | ED2017-94 MW2017-163 pp.7-10 |
| MW, ED | 2015-01-16 11:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement of RF performance of GaN-HEMT on silicon substrate Isao Makabe, Hiroyuki Ichikawa, Keiichi Yui, Tsuyoshi Kouchi, Kazutaka Inoue, Ken Nakata (SEI) ED2014-128 MW2014-192 |
[more] | ED2014-128 MW2014-192 pp.65-70 |
| CPM, LQE, ED | 2010-11-12 11:15 |
Osaka | Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113 |
A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] | ED2010-157 CPM2010-123 LQE2010-113 pp.67-70 |
|
| CPM, ED, LQE | 2007-10-12 09:50 |
Fukui | Fukui Univ. | Low leakage current ITO schottky electrode for AlGaN/GaN HEMT Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) ED2007-167 CPM2007-93 LQE2007-68 |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] | ED2007-167 CPM2007-93 LQE2007-68 pp.57-61 |
| ED, CPM, LQE | 2006-10-05 13:25 |
Kyoto | Improvement of Breakdown Voltage of AlGaN/GaN HEMT Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] | ED2006-153 CPM2006-90 LQE2006-57 pp.7-12 |
|
| LQE, ED, CPM | 2005-10-13 14:30 |
Shiga | Ritsumeikan Univ. | Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications Ken Nakata, Takeshi Kawasaki, Seiji Yaegashi (Eudyna Device Inc.) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] | ED2005-129 CPM2005-116 LQE2005-56 pp.51-56 |
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