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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ET | 2018-11-10 13:10 |
Tokyo | Tokyo Polytechnic University | A Learning Method Aimed at Acquisition of Viewpoints in System Requirements Analysis Shunya Ishii, Kiyoshi Nakabayashi (CIT)  ET2018-57 |
This paper describes the design consideration of learning method aiming to make learners acquire the analysis viewpoints... [more] | ET2018-57 pp.23-28 |
| SDM | 2017-11-09 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Impurity Diffusion Modeling in SiC Masashi Uematsu (Keio Univ.) SDM2017-64 |
SiC is an attractive material for the application of high-power electronic devices. In this article, the current status ... [more] | SDM2017-64 pp.15-20 |
| SDM | 2016-11-11 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Application of DFT Calculation for the Development of High Quality Si and Ge Substrates
-- From Ultra Large Diameter Crystal Pulling to Metal Gettering -- Koji Sueoka (Okayama Pref. Univ.) SDM2016-87 |
During the last decade, considerable progress has been made in understanding the properties and behavior of the vacancy ... [more] | SDM2016-87 pp.49-54 |
| SDM | 2015-11-05 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Current Status of Impurity Diffusion Modeling in Semiconductors Masashi Uematsu (Keio Univ.) SDM2015-84 |
With the scaledown of CMOS devices, it is crucial to establish a diffusion model to accurately predict impurity diffusio... [more] | SDM2015-84 pp.1-6 |
| SDM | 2014-11-07 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.) SDM2014-104 |
For the mass-production of 450 mm-diameter defect-free Si crystals, one has to take into account the impact of thermal s... [more] | SDM2014-104 pp.47-52 |
| ED, LQE, CPM | 2012-11-29 11:05 |
Osaka | Osaka City University | Applicationo of III-V nitride films to photovoltaic device Masatomo Sumiya, Liwen Sang, Mickael Lozac'h (NIMS) ED2012-67 CPM2012-124 LQE2012-95 |
We have proposed the solar cell system composing III-V nitride film with wider band gap. III-V nitride solar cell is mec... [more] | ED2012-67 CPM2012-124 LQE2012-95 pp.9-12 |
| DC | 2012-02-13 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A method to reduce the number of test patterns for transition faults using control point insertions Akihiko Takahashi, Toshinori Hosokawa (Nihon Univ), Masayoshi Yoshimura (Kyushu Univ) DC2011-82 |
In recent year, the growing density and complexity for VLSIs cause an increase in the number of test patterns. Moreover,... [more] | DC2011-82 pp.37-42 |
| DC | 2010-02-15 13:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Test Compaction Oriented Control Point Insertion Method for Transition Faults Yoshitaka Yumoto, Toshinori Hosokawa (Nihon Univ.), Masayoshi Yoshimura (Kyusyu Univ.) DC2009-72 |
The recent advances in semiconductor processing technology have resulted in the exponential increase in LSI circuit dens... [more] | DC2009-72 pp.45-50 |
| SDM | 2009-11-13 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.) SDM2009-149 |
Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most ... [more] | SDM2009-149 pp.79-84 |
| SDM, ED | 2008-07-09 13:45 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Precise Ion Implantation for Advanced MOS LSIs Toshiharu Suzuki (SEN) ED2008-44 SDM2008-63 |
Issues in the ion implantation technology employed in advanced MOSLSIs are addressed, where the placement of implanted i... [more] | ED2008-44 SDM2008-63 pp.25-30 |
| SS | 2005-03-14 13:00 |
Ishikawa | JAIST (IS 5F collabo#7) | About Extension of Real-Time Software Development Management System EPM:
-- Graph using SRGM and Linkage with Source Code Analysis Systems -- Reishi Yokomori, Makoto Ichii (Osaka Univ.), Taira Shinkai (Hitachi Systems and Services), Katsuro Inoue (Osaka Univ.) |
Understanding the current development status is the essential activities for improvement of the development process. O... [more] |
SS2004-56 pp.1-6 |
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