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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-11-11
15:15
Online Online [Invited Talk] Reliable design of SiC Power Modules -- An Experimental Characterization for Aging Prediction --
Shuhei Fukunaga (Osaka Univ.), Alberto Castellazzi (KUAS), Tsuyoshi Funaki (Osaka Univ.) SDM2022-76
This research aims to develop the reliable design of multi-chip power modules with SiC MOSFETs for high-voltage power co... [more] SDM2022-76
pp.55-60
RECONF 2022-06-07
13:50
Ibaraki CCS, Univ. of Tsukuba
(Primary: On-site, Secondary: Online)
Hardware implementation of the protocol for ROS2 and robot modules without CPU
Daiki Matsunaga, Tomoya Shoji, Shozo Takeoka (AXE) RECONF2022-3
ROS2 is a set of software libraries and tools for robot applications. It is widely used in robot development. A ROS2 rob... [more] RECONF2022-3
pp.13-19
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2019-11-15
10:05
Ehime Ehime Prefecture Gender Equality Center Evaluation of operating performance of ECDSA hardware module
Yuya Takahashi, Monta kazuki (Kobe Univ.), Toshihiro Sato, Takaaki Okidono (ECSEC Lab), Takuji Miki, Noriyuki Miura, Makoto Nagata (Kobe Univ.) ICD2019-35 IE2019-41
There are limits to how much IoT power and encryption speed can be improved at the software level. Therefore, it is nece... [more] ICD2019-35 IE2019-41
pp.37-40
EMCJ 2016-09-16
11:05
Hyogo University of Hyogo A current distribution measurement with magnetic near field intensity for designing wiring pattern in a SiC power module
Eisuke Masuda, Takaaki Ibuchi, Tsuyoshi Funaki (Osaka Univ.), Hirotaka Otake, Tatsuya Miyazaki, Yasuo Kanetake, Takashi Nakamura (ROHM) EMCJ2016-50
Fast switching operation of wide-bandgap power semiconductor devices is expected to reduce the switching losses in a pow... [more] EMCJ2016-50
pp.1-6
ED 2016-01-20
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter
Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa (Mitsubishi Electric) ED2015-113
For the further efficiency improvement of existing power modules for railcar traction, we have developed MOSFETs with a ... [more] ED2015-113
pp.7-12
SDM 2012-11-15
13:00
Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] High Performance SiC Power Devices and Modules -- Miniaturization of System by Low-Ron and High Temperature Operation --
Takashi Nakamura, Masatoshi Aketa, Yuki Nakano, Takukazu Otsuka, Toshio Hanada (ROHM) SDM2012-100
Ultra-small power modules with high temperature operation are realized by using low-Ron SiC trench MOSFET. [more] SDM2012-100
pp.9-10
 Results 1 - 6 of 6  /   
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