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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, LQE, ED |
2019-11-22 13:05 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.) ED2019-54 CPM2019-73 LQE2019-97 |
Ultra-thin GaN/AlN quantum wells at a mono-molecular layer (ML) level are fabricated on vicinal AlN (0001) substrates wi... [more] |
ED2019-54 CPM2019-73 LQE2019-97 pp.89-92 |
SDM |
2010-06-22 09:55 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Development of Silicon Nanowire MOSFETs through Atomic-Scale Design Concepts Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST) SDM2010-34 |
Process technology with atomic-scale precision is indispensable for fabrication of silicon nanowire MOSFETs. We present ... [more] |
SDM2010-34 pp.5-10 |
CPM, ED, LQE |
2007-10-12 14:40 |
Fukui |
Fukui Univ. |
Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices Naoki Hashimoto, Akihiko Yuki, Hideyuki Saito (Chiba Univ.), Xinqiang Wang (JST), Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ./JST) ED2007-175 CPM2007-101 LQE2007-76 |
In order to clarify RF-MBE growth mechanism of ultrathin InN on Ga-polarity GaN, we investigated tolal supply of InN dep... [more] |
ED2007-175 CPM2007-101 LQE2007-76 pp.93-96 |
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