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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-01-30
11:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92		 A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] SDM2017-92
pp.5-8
OME 2013-10-11
10:40		 Osaka Osaka Univ. Nakanoshima Center Fabrication of Active Antenna for RFID Tag using Organic Oransistors
Sho Hasegawa, Shunsuke Isoda, Takahiro Hashizume, Hiroshi Yamauchi, Shigekazu Kuniyoshi, Masatoshi Sakai, Kazuhiro Kudo, Masaaki Iizuka (Chiba Univ.) OME2013-53		 In this research, we propose active antenna combined with Step-edge Vertical Channel Organic Field-Effect Transistor (SV... [more] OME2013-53
pp.11-16
ED, SDM, CPM 2012-05-18
09:00		 Aichi VBL, Toyohashi Univ. of Technol. High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) ED2012-26 CPM2012-10 SDM2012-28		 We fabricated a vertical metal-insulator-semiconductor feld-effect transistor (MISFET) with a heterostructure launcher a... [more] ED2012-26 CPM2012-10 SDM2012-28
pp.43-48
SDM, ED 2008-07-11
09:25		 Hokkaido Kaderu２・７ [Invited Talk] Recent Advances on GaN Vertical Power Device
Tetsu Kachi (Toyota Central R&D Labs., Inc.) ED2008-72 SDM2008-91		 Two types of the vertical device structure have been developed for GaN power devices. One is similar to DMOSFET, which ... [more] ED2008-72 SDM2008-91
pp.171-175
OME 2008-05-29
16:00		 Tokyo Denki-Club, Meeting room 3 Electrical Characterization of Vertical Channel Organic Field-Effect Transistor with Step-Edge Structure
Tomoki Takano, Hiroshi Yamauchi, Masaaki Iizuka, Shigekazu Kuniyoshi, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2008-29		 The organic field-effect transistor (OFET) with step-edge structure having a very short channel length was fabricated. S... [more] OME2008-29
pp.45-50
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