IEICE Technical Report

Print edition: ISSN 0913-5685

Volume 106, Number 256

Silicon Device and Materials

Workshop Date : 2006-09-25 - 2006-09-26 / Issue Date : 2006-09-18

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Table of contents

SDM2006-155 SDM2006-160
A Processor for Genetic Algorithm using Dynamically Reconfigurable Memory
Akihiko Tsukahara, Akinori Kanasugi (Tokyo Denki Univ.)
pp. 1 - 6

SDM2006-156 SDM2006-161
To be announced
Yoshio Ashizawa, Hideki Oka (FUJITSU LABORATORIES)
pp. 7 - 12

SDM2006-157 SDM2006-162
Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation
Katsumi Eikyu, Takeshi Okagaki, Motoaki Tanizawa, Kiyoshi Ishikawa, Osamu Tsuchiya (Renesas)
pp. 13 - 18

SDM2006-158 SDM2006-163
Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal
Ken'ichiro Sonoda, Kiyoshi Ishikawa, Takahisa Eimori, Osamu Tsuchiya (Renesas Technology Corp.)
pp. 19 - 24

SDM2006-159 SDM2006-164
Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations
Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.)
pp. 25 - 29

SDM2006-165
To be announced
Yoshimasa Yoshioka, Yasuhisa Omura (Kansai Univ.)
pp. 31 - 36

SDM2006-166
A Novel Asymmetric Raised Source/Drain Extension Structure for 32nm-node MOSFETs -- An ultimate planar MOSFET --
Tsutomu Imoto, Yasushi Tateshita, Toshio Kobayashi (SONY)
pp. 37 - 42

SDM2006-167
To be announced
Tsuyoshi Yamamura, Shingo Sato, Yasuhisa Omura (Kansai Univ.)
pp. 43 - 48

SDM2006-168
To be announced
Hideaki Tsuchiya, Kazuya Fujii, Takashi Mori, Tanroku Miyoshi (Kobe Univ.)
pp. 49 - 54

SDM2006-169
To be announced
Hideki Minari, Nobuya Mori (Osaka Univ.)
pp. 55 - 58

SDM2006-170
Quantum Electron Transport Modeling in Nano-Scale Devices Based on Multiband Non-Equilibrium Green's Funtion Method
Helmy Fitriawan, Satofumi Souma, Matsuto Ogawa, Tanroku Miyoshi (Kobe Univ.)
pp. 59 - 63

SDM2006-171
To be announced
Masami Hane, Takeo Ikezawa, Michihito Kawada (NEC), Tatsuya Ezaki (Hiroshima Univ.), Toyoji Yamamoto (MIRAI-ASET)
pp. 65 - 69

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan