Print edition: ISSN 0913-5685
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ED2006-200
Reduced Gain Variation against Temperature with NTC Thermistor on HPA Module for W-CDMA System
Akira Kuriyama (CRL), Shigehiro Yuyama (Renesas), Masami Ohnishi, Hidetoshi Matsumoto (CRL), Tomonori Tanoue, Isao Ohbu (Renesas)
pp. 1 - 5
ED2006-201
Vdd Gate Biasing RF CMOS Amplifier Design Technique Based on the Effect of Carrier Velocity Saturation
Noboru Ishihara (Gunma Univ.)
pp. 7 - 12
ED2006-202
Design of Miniaturized Microstrip Lumped-Element Ultra-Wideband Bandpass Filters
Zhewang Ma, Hiroaki Ishihara, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.)
pp. 13 - 18
ED2006-203
Design of Compact Microstrip Bandpass Filters Using Lumped-Element Composite Resonators
Zhewang Ma, Hisayoshi Abe, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.)
pp. 19 - 22
ED2006-204
Novel Triple-band Bandpass Filter Using Composite Resonator
Taichi Shimizu, Zhewang Ma, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.)
pp. 23 - 28
ED2006-205
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Shin Matsumoto (UEC), Yukihiro Shimakata, Mitsuyuki Yamauchi (TAIYO YUDEN), Koji Wada, Takashi Iwasaki (UEC)
pp. 29 - 34
ED2006-206
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Nobuhiko Okuzaki (UEC), Yukihiro Shimakata, Mitsuyuki Yamauchi (TAIYO YUDEN), Koji Wada, Takashi Iwasaki (UEC)
pp. 35 - 40
ED2006-207
Submillimeter Wave Radiation Characteristics from a Periodic Metal Structure on Solid-State Plasma
Kazuya Doi, Shinichi Yodokawa, Satoru Kousaka, Tetsuo Obunai (Akita Univ.)
pp. 41 - 46
ED2006-208
Ku-band Oscillators with Reflection Type Zero-th Order Resonator
Hiroyuki Mizutani, Masaomi Tsuru, Kenji Kawakami, Tamotsu Nishino, Moriyasu Miyazaki (Mitsubishi Electric Corp.)
pp. 47 - 50
ED2006-209
A Fundamental Study on Improving Near Out-of-Band Characteristics of BPF Using Branch-Stub Resonators
Takenori Yasuzumi, Takanobu Ohno, Osamu Hashimoto (Aoyama Gakuin Univ.), Koji Wada (The Univ. of Electron-Communications)
pp. 51 - 56
ED2006-210
Band-Switching Multi-band Isolator
Takayuki Furuta, Atsushi Fukuda, Hiroshi Okazaki, Shoichi Narahashi (NTT DOCOMO)
pp. 57 - 60
ED2006-211
[Special Talk]
A Report on the 36th European Microwave Conference
Tomohiro Seki, Hideki Kamitsuna (NTT), Atsushi Fukuda (NTT DoCoMo), Takayuki Tanaka (Saga University), Tamotsu Nishino, Kenichi Miyaguchi (Mitsubishi Electric Corporation), Chun-Ping Chen (Kanagawa University), Shinya Sugiura (Toyota Central R&D Labs., Inc.), Yasuhiro Kazama (Japan Radio CO.,Ltd.)
pp. 61 - 68
ED2006-212
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Nguyen Quoc Dinh, Nguyen Thanh, Toshihisa Kamei, Yozo Utsumi (NDA)
pp. 69 - 72
ED2006-213
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Takehiko Maeda, Toshihisa Kamei, Yozo Utsumi (NDA)
pp. 73 - 77
ED2006-214
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Takeshi Izuho, Futoshi Kuroki (Kure Nat'l Coll of Tech), Tsukasa Yoneyama (Tohoku Inst of Tech)
pp. 79 - 82
ED2006-215
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Futoshi Kuroki, Hiroshi Ohta (Kure Nat'l Coll of Tech)
pp. 83 - 88
ED2006-216
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Futoshi Kuroki, Hiroshi Ohta (Kure Nat'l Coll of Tech)
pp. 89 - 94
ED2006-217
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Futoshi Kuroki, Kazuya Miyamoto, Ryo-ta Masumoto, Ryo-ji Tamaru (Kure Nat'l Coll of Tech)
pp. 95 - 98
ED2006-218
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Futoshi Kuroki, Kazuya Miyamoto (Kure Nat'l Coll of Tech)
pp. 99 - 103
ED2006-219
Characterization of coupling coefficient of microwave resonators by FDTD method
Kenji Suzuki, Tetsuya Ishida, Ikuo Awai (Ryukoku Univ.)
pp. 105 - 110
ED2006-220
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Tatsuya Fukunaga (TDK), Koji Wada (UEC)
pp. 111 - 114
ED2006-221
A study on material measurement methods using FDTD simulation techniques
-- Measurements of surface resistance of metals and dielectric plates including semiconductor wafer in millimeter-wave range --
Yukio Iida, Koichi Nakao, Yasuhisa Omura, Susumu Tamura (Kansai Univ.)
pp. 115 - 120
ED2006-222
A Study on the Measurement of Complex Permittivity of Powder Using Low Melting Point Plastic
Kenjiro Otsuka, Akihiro Sato, Osamu Hashimoto (Aoyama Gakuin Univ.)
pp. 121 - 124
ED2006-223
A Study on Measurement of a Complex Relative Permittivity Tensor of High Lossy Material Using Lens Antennas
Masanao Miyamoto, Osamu Hashimoto, Shinya Watanabe (Aoyama Univ.)
pp. 125 - 130
ED2006-224
Dual-Frequency Responsive Microwave Absorber for Wireless LAN Using a Plaster Board and Resistive Film
Takuya Nakamura, Kenjiro Otsuka, Yuichi Sakumo, Osamu Hashimoto (Aoyama Gakuin Univ.)
pp. 131 - 135
ED2006-225
A Study on Wave Absorber with Circular Lattice Using Rubber Sheet with Fine Weatherability
Takeru Ozawa, Kouta Matsumoto, Yu Miura (Aoyama Gakuin Univ.), Osamu Okada (Bridgestone Corp.), Osamu Hashimoto (Aoyama Gakuin Univ.)
pp. 137 - 142
ED2006-226
A 2.4-V Reference Voltage Operation InGaP-HBT MMIC Power Amplifier for CDMA Handsets
Takao Moriwaki, Kazuya Yamamoto, Nobuyuki Ogawa, Takeshi Miura, Kosei Maemura, Teruyuki Shimura (Mitsubishi Electric)
pp. 143 - 148
ED2006-227
A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations
Isao Takenaka, Koji Ishikura, Hidemasa Takahashi, Koichi Hasegawa, Takashi Ueda, Toshimichi Kurihara, Kazunori Asano, Naotaka Iwata (NEC Electronics)
pp. 149 - 154
ED2006-228
A 3.5 GHz low distortion high powr FET using GaAs on-chip harmonic tuning circuit
Seiki Goto, Tetsuo Kunii, Akira Inoue (Mitsubishi Electric Corp.), Toshikazu Oue (WTI), Masaki Kohno, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.)
pp. 155 - 160
ED2006-229
A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT
Akira Inoue, Hirotaka Amasuga, Seiki Goto, Tetsuo Kunii, Tomoki Oku, Takahide Ishikawa (Mitsubishi)
pp. 161 - 166
ED2006-230
A Miniaturized, Wideband 8x8 Switch Matrix MMIC Using InP HEMTs
Hideki Kamitsuna (NTT), Yasuro Yamane (NEL), Masami Tokumitsu (NTT), Hirohiko Sugahara (NTT-AT), Takatomo Enoki (NTT)
pp. 167 - 171
ED2006-231
A 0/20-dB Step Attenuator Using GaAs-HBT Compatible, AC-Coupled, Stack-Type Base-Collector Diode Switches
Kazuya Yamamoto, Miyo Miyashita, Nobuyuki Ogawa, Takeshi Miura, Teruyuki Shimura (Mitsubishi Electric)
pp. 173 - 178
ED2006-232
Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs
Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE)
pp. 179 - 182
ED2006-233
High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition
Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT)
pp. 183 - 187
ED2006-234
Improvement of Breakdown Voltage in Double-Heterojunction III-N FET with AlN Buffer Layer
Hisayoshi Matsuo, Hiroaki Ueno, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric Industrial Co., Ltd.)
pp. 189 - 192
ED2006-235
A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic)
pp. 193 - 197
ED2006-236
Current collapse of inslated-gate GaN-HEMT
Masahito Kanamura, Toshihiro Ohki, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa, Kazukiyo Joshin (Fujitsu, Fujitsu Labs.)
pp. 199 - 203
ED2006-237
High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT
Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor)
pp. 205 - 208
ED2006-238
Over 80W Output Power X-band AlGaN/GaN HEMT
Keiichi Matsushita, Yasushi Kashiwabara, Kazutoshi Masuda, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba)
pp. 209 - 212
ED2006-239
GaN-HEMT with high breakdown voltage and high fmax for millimeter-wave application
Kozo Makiyama, Toshihiro Ohki, Kenji Imanishi, Masahito Kanamura (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.)
pp. 213 - 217
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.