Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2010-175
The 5.8GHz Receiving and Rectenna Array for Wireless Communication and Power Transmission
Masakazu Hori, Kosuke Isono, Hirofumi Noji, Yasuhiro Shibuya (TUS), Shigeo Kawasaki (JAXA)
pp. 1 - 6
ED2010-176
A Study on GaAs-HBT MMIC couplers with feedback circuit techniques
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Akira Inoue (Mitsubishi Electric)
pp. 7 - 12
ED2010-177
Broadside Couplers using Offset-Coupled Lines with Adjacent Ground Through Holes in Multi-layered Substrate
Takeshi Yuasa, Yukihiro Tahara, Tetsu Owada, Naofumi Yoneda (Mitsubishi Electric Corp.)
pp. 13 - 18
ED2010-178
Power Absorption Characteristics for Uniform Microwave Heating of Medium with High Conductivities
Yuki Nakajima, Suguru Imai, Kenji Taguchi, Tatsuya Kashiwa (Kitami Inst. of Tech.), Toshihide Kitazawa (Ritsumeikan Univ.), Masahiro Suzuki, Kan-ichi Fujii (JAEA)
pp. 19 - 22
ED2010-179
Broadband High Efficiency Class-E GaN HEMT Amplifier
Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric)
pp. 23 - 28
ED2010-180
A High-Speed Digital-to-Analog Converter with InP HBT Technology for Multi-Level Optical Transmission Systems
Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT)
pp. 29 - 33
ED2010-181
32-GHz Phase Shifter IC with 810° control range
Hideyuki Nosaka, Munehiko Nagatani, Kimikazu Sano, Koichi Murata (NTT)
pp. 35 - 40
ED2010-182
Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.)
pp. 41 - 44
ED2010-183
Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.)
pp. 45 - 50
ED2010-184
Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate
Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.)
pp. 51 - 54
ED2010-185
AlGaN/GaN HFETs using highly C-doped layers on Si substrate
Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD)
pp. 55 - 59
ED2010-186
Developing GaN HEMTs for Ka-Band with 20W
Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken Onodera, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba)
pp. 61 - 64
ED2010-187
Process dependence of MOS gate dielectric films on 3C-SiC-OI
Keisuke Yokoyama, Hiroyuki Nakamura, Motoi Nakao, Katsunori Onishi (KIT)
pp. 65 - 68
ED2010-188
III-V quantum well channel MOSFET with back electrode
Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech)
pp. 69 - 73
ED2010-189
New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications
Takuya Tsutsumi, Suehiro Sugitani, Kazumi Nishimura, Minoru Ida (NTT)
pp. 75 - 80
ED2010-190
A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars
Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric)
pp. 81 - 86
ED2010-191
A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs
Yasufumi Kawai, Shinji Ujita, Takeshi Fukuda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)
pp. 87 - 90
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.