Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2011-115
[Invited Talk]
Equivalent circuit models for MEMS sensors and actuators based on electrical circuit simulator
Hiroshi Toshiyoshi (Univ. of Tokyo)
pp. 1 - 6
SDM2011-116
[Invited Talk]
SISPAD 2011 Review
Hirokazu Hayashi (Lapis Semi.)
pp. 7 - 10
SDM2011-117
[Invited Talk]
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi)
pp. 11 - 15
SDM2011-118
[Invited Talk]
Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation
Yusuke Higashi, Nobuyuki Momo, Hisayo S. Momose, Tatsuya Ohguro, Kazuya Matsuzawa (Toshiba)
pp. 17 - 20
SDM2011-119
[Invited Talk]
Device Simulation of STM Carrier Profiling
Koichi Fukuda, Masayasu Nishizawa, Tetsuya Tada (AIST), Leonid Bolotov (Tsukuba Univ.), Kaina Suzuki, Shigeo Sato (Fujitsu Semiconductor), Hiroshi Arimoto, Toshihiko Kanayama (AIST)
pp. 21 - 26
SDM2011-120
Simulation of Phonon Transport in Silicon Nanostructures Based on Monte-Carlo Method
Kentaro Kukita (Osaka Univ.), Yoshinari Kamakura (Osaka Univ./JST)
pp. 27 - 31
SDM2011-121
Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation
Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.)
pp. 33 - 38
SDM2011-122
Analytical Compact Model Using Perturbation Method for Circuit Simulation of Ballistic and Quasi-ballistic Gate-All-Around MOSFET with Cylindrical Cross Section
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.)
pp. 39 - 43
SDM2011-123
Enhancement of current density in asymmetric horn-shaped channel
-- Ensemble Monte-Carlo/Molecular Dynamics Simulation --
Takefumi Kamioka (Waseda Univ./JST), Hiroya Imai (Waseda Univ.), Kenji Ohmori, Kenji Shiraishi (Univ. of Tsukuba/JST), Yoshinari Kamakura (Osaka Univ./JST), Takanobu Watanabe (Waseda Univ./JST)
pp. 45 - 50
SDM2011-124
[Invited Talk]
Usages of TCAD simulation on development of semiconductor for vehicles and future ploblems
Hisashi Ishimabushi, Takashi Ueta, Masaru Nagao, Kimimori Hamada (TMC)
pp. 51 - 55
SDM2011-125
Investigation of Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage in Bulk and SOI NAND Flash Memory Cells
Kousuke Miyaji, Chinglin Hung, Ken Takeuchi (Univ. of Tokyo)
pp. 57 - 61
SDM2011-126
Design of a Fully-Parallel High-Density Nonvolatile TCAM Using MTJ Devices
Akira Katsumata, Shoun Matsunaga, Takahiro Hanyu (Tohoku Univ.)
pp. 63 - 68
SDM2011-127
Design Technology of stacked Type Chain PRAM
Sho Kato, Shigeyoshi Watanabe (SIT)
pp. 69 - 74
SDM2011-128
Gate Voltage Dependence of Channel Length Modulation Coefficient for Nanoscale MOSFETs
Akira Hiroki, Jong Chul Yoon (Kyoto Institute of Tech.)
pp. 75 - 80
SDM2011-129
Higher-order Effects of Source and Drain Parasitic Resistances for Nanoscale MOSFETs
Jong Chul Yoon, Akira Hiroki (Kyoto Institute of Tech.)
pp. 81 - 85
SDM2011-130
An Efficient Analysis of Large-Scale RLC Circuits with CMOS Loads
Yuichi Tanji (Kagawa Univ.)
pp. 87 - 91
SDM2011-131
Study of pattern area reduction for standard cell with planar and SGT transistor
Takahiro Kodama, Shigeyoshi Watanabe (SIT)
pp. 93 - 98
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.