Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ICD2011-1
[Invited Talk]
Trends and Multi-level-cell Technology of Spin Transfer Torque Memory
Takashi Ishigaki, Takayuki Kawahara, Riichiro Takemura, Kazuo Ono, Kenchi Ito (Hitachi), Hideo Ohno (Tohoku U.)
pp. 1 - 5
ICD2011-2
[Invited Talk]
A Technical Trend and Embedded DRAM Technology for High-Performance NAND Flash Memories
Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii (Toshiba)
pp. 7 - 12
ICD2011-3
[Invited Talk]
ReRAM Test Macro with High Speed Read/Program Circuit
-- Conductive Bridge ReRAM with 2.3GB/s Read throughput and 216MB/s Program-throughput --
Keiichi Tsutsui, Wataru Otsuka, Koji Miyata, Makoto Kitagawa, Tomohito Tsushima (Sony)
pp. 13 - 18
ICD2011-4
[Invited Talk]
Technology Trend of NAND Flash Memories
-- A 151mm2 64Gb 2b/cell NAND Flash Memory in 24nm CMOS Technology --
Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Junpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai (Toshiba), Kiyofumi Sakurai (Toshiba Memory Systems), Toru Miwa (SanDisk)
pp. 19 - 26
ICD2011-5
[Invited Talk]
Highly reliable low power SSD
-- Data modulation signal processing technologies of memory cotroller --
Ken Takeuchi, Shuhei Tanakamaru, Chinglin Hung (Univ. Tokyo)
pp. 27 - 32
ICD2011-6
[Invited Talk]
Trend in Phase Change Memory and activity in TIA
Norikatsu Takaura (LEAP)
pp. 33 - 36
ICD2011-7
[Invited Talk]
3-Dimensional NAND Flash memories
Seiichi Aritome (Hynix)
pp. 37 - 42
ICD2011-8
0.45-V Operating Vt-Variation Tolerant 9T/18T Dual-Port SRAM
Koji Yanagida, Hiroki Noguchi, Shunsuke Okumura, Tomoya Takagi, Koji Kugata (Kobe Univ.), Masahiko Yoshimoto (Kobe Univ./JST), Hiroshi Kawaguchi (Kobe Univ.)
pp. 43 - 48
ICD2011-9
A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers
Yusuke Niki, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yuki Fujimura, Tomoaki Yabe (Toshiba)
pp. 49 - 54
ICD2011-10
Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs
Koichi Takeda, Toshio Saito, Shinobu Asayama, Yoshiharu Aimoto, Hiroyuki Kobatake, Shinya Ito, Toshifumi Takahashi, Kiyoshi Takeuchi, Masahiro Nomura, Yoshihiro Hayashi (Renesas Electronics)
pp. 55 - 58
ICD2011-11
0.5-V FinFET SRAM Using Dynamic-Threshold-Voltage Pass Gates
Shin-ichi O'uchi, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST)
pp. 59 - 63
ICD2011-12
0.5-V, 5.5-nsec Access Time, Bulk-CMOS 8T SRAM with Suspended Bit-Line Read Scheme
Toshikazu Suzuki, Shinichi Moriwaki, Atsushi Kawasumi, Shinji Miyano, Hirofumi Shinohara (STARC)
pp. 65 - 70
ICD2011-13
Suppress of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor
Kousuke Miyaji, Kentaro Honda, Shuhei Tanakamaru (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo)
pp. 71 - 76
ICD2011-14
[Invited Talk]
A 12Gb/s Non-Contact Interface with Coupled Transmission Lines
Tsutomu Takeya, Lan Nan, Shinya Nakano, Noriyuki Miura, Hiroki Ishikuro, Tadahiro Kuroda (Keio Univ.)
pp. 77 - 80
ICD2011-15
1-Tbyte/s 1-Gbit Multicore DRAM Architecture using 3-D Integration for High-throughput Computing
Kazuo Ono, Yoshimitsu Yanagawa, Akira Kotabe, Tomonori Sekiguchi (Hitachi, CRL)
pp. 81 - 86
ICD2011-16
Design of Program-voltage(20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System
Teruyoshi Hatanaka, Koh Johguchi, Koichi Ishida, Tadashi Yasufuku, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo)
pp. 87 - 92
ICD2011-17
Basic memory characteristics of HfO2-CB-RAM
Shigeyuki Tsuruta (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./ TEDREC), Tatsuya Nakabayashi (Tottori Univ.), Satoru Kishida (Tottori Univ./ TEDREC)
pp. 93 - 97
ICD2011-18
Physical Analysis on ReRAM Filaments Using Atomic Force Microscope
Takatoshi Yoda (Tottori Univ.), Kentaro Kinoshita, Satoru Kishida (Tottori University/TEDREC), Toshiya Ogiwara, Hideo Iwai, Sei Fukushima, Shigeo Tanuma (NIMS)
pp. 99 - 104
ICD2011-19
Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM)
Akihiro Hanada (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./TEDREC), Katsuhiko Matsubara, Takahiro Fukuhara (Tottori Univ.), Satoru Kishida (Tottori Univ./TEDREC)
pp. 105 - 109
ICD2011-20
Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides
Hayato Tanaka (Tottori Univ), Kentaro Kinoshita, Satoru Kishida (Tottori Univ./TEDREC)
pp. 111 - 116
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.