IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2012-11-15 - 2012-11-16 / Issue Date : 2012-11-08

SDM2012-98
[Invited Talk] 2012 SISPAD Review -- quantum transport, new materials, atomistic molecular modeling, and other topics --
Yoshinari Kamakura (Osaka Univ.)
pp. 1 - 4

SDM2012-99
[Invited Talk] 2012 SISPAD Paper Review -- Compact Model, Device Variability, Device Reliability --
Takahiro Iizuka (Hiroshima Univ.)
pp. 5 - 7

SDM2012-100
[Invited Talk] High Performance SiC Power Devices and Modules -- Miniaturization of System by Low-Ron and High Temperature Operation --
Takashi Nakamura, Masatoshi Aketa, Yuki Nakano, Takukazu Otsuka, Toshio Hanada (ROHM)
pp. 9 - 10

SDM2012-101
New design method for power devices using topology optimization based on the adjoint variable method
Katsuya Nomura, Tsuguo Kondoh, Tsuyoshi Ishikawa, Atsushi Kawamoto, Tadayoshi Matsumori, Takahide Sugiyama (TCRDL)
pp. 11 - 14

SDM2012-102
[Invited Talk] Fluctuation of MOSFETs from Low-Frequency Noise to Thermal Noise Using a Novel Measurement System beyond 100 MHz
Kenji Ohmori (Uni. of Tsukuba)
pp. 15 - 19

SDM2012-103
Neutral and Attractive Traps in Random Telegraph Signal Noise Phenomena using (100)- and (110)-Oriented CMOSFETs
Jiezhi Chen, Izumi Hirano, Kosuke Tatsumura, Yuichiro Mitani (Toshiba Corp)
pp. 21 - 24

SDM2012-104
An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs
Masahiro Yamamoto, Akira Hiroki, Jong Chul Yoon (KIT)
pp. 25 - 30

SDM2012-105
Prospect of Low-Energy Operation of Scaled Cross-Current Tetrode (XCT) SOI CMOS
Daiki Sato, Yasuhisa Omura (Kansai Univ.)
pp. 31 - 36

SDM2012-106
Empirical Pseudopotential Calculations of Two-Dimensional Electronic States in 4H-SiC Inversion layers
Ryuta Watanabe, Yoshinari Kamakura (Osaka Univ.)
pp. 37 - 42

SDM2012-107
Impact of Discrete Dopant in Characteristics of Nanowire Transistors -- KMC and NEGF Study --
Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.)
pp. 43 - 46

SDM2012-108
Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures
Tomofumi Zushi (Waseda Univ./JST), Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba/JST), Takanobu Watanabe (Waseda Univ./JST)
pp. 47 - 52

SDM2012-109
Monte Carlo Simulation of Phonon Transport in Silicon Thin Films Including Realistic Dispersion Relation
Kentaro Kukita (Osaka University), Yoshinari Kamakura (Osaka University/JST CREST)
pp. 53 - 58

SDM2012-110
Effect of a three-dimensional strain field on the electronic band structures of carbon nanotubes and graphene sheets
Ken Suzuki, Masato Ohnishi, Hideo Miura (Tohoku Univ.)
pp. 59 - 61

SDM2012-111
Nonlocal band to band tunneling model for tunnel-FETs -- Device and circuit models --
Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST)
pp. 63 - 68

SDM2012-112
ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS for CIRCUIT SIMULATION
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.)
pp. 69 - 73

SDM2012-113
Design method of system LSI and SEA cell type DRAM with tunneling type transistor.
Ryosuke Suzuki, Shigeyoshi Watanabe (Shonan Inst. of Tech)
pp. 75 - 80

SDM2012-114
Design Technology of stacked Type Chain PRAM Readout
Sho Kato, Shigeyoshi Watanabe (Shonan Inst, of Tech,)
pp. 81 - 86

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan