Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2012-112
Design of NRD Guide at 94 GHz
Futoshi Kuroki, Shingo Inoue, Tomonori Morita, Yohei Kubo (KNCT)
pp. 1 - 4
ED2012-113
A Study of RF Energy Harvesting from Broadcasting and Communication Radio Wave
Shoichi Kitazawa, Hirokazu Kamoda, Masahiro Hanazawa, Susumu Ano, Hiroshi Ban, Kiyoshi Kobayashi (ATR)
pp. 5 - 10
ED2012-114
Q Factor Simulation and SSB Noise Measurement for Transmission Line Feedback FET Oscillators with FET Parasitic Elements
Takanari Minami, Sonshu Sakihara, Tuya Wuren, Hideyuki Uehara, Takashi Ohira (TUT)
pp. 11 - 16
ED2012-115
Double-layer Corporate-feed Hollow-waveguide Slot Array Antenna and Its Data Transmission Test Results in millimeter wave band
Dongjin Kim, Jiro Hirokawa, Makoto Ando (Tokyo Institute of Tech.), Jun Takeuchi, Akihiko Hirata (NTT), Tadao Nagatsuma (Osaka Univ.)
pp. 17 - 22
ED2012-116
120-GHz-band 20-Gb/s QPSK Transmitter and Receiver modules
Hiroyuki Takahashi, Toshihiko Kosugi, Akihiko Hirata, Jun Takeuchi, Koichi Murata, Naoya Kukutsu (NTT)
pp. 23 - 28
ED2012-117
Evaluation of fade slope due to weather for 120-GHz-band wireless link
Akihiko Hirata, Jun Takeuchi, Hiroyuki Takahashi, Naoya Kukutsu (NTT)
pp. 29 - 33
ED2012-118
Low-loss On Chip CMOS Patterned Ground Coplanar Waveguide Transmission Line for Millimeter-wave Technology
Dayang Azra Binti Awang Mat, Ramesh K. Pokharel, Rohana Sapawi, Haruichi Kanaya, Keiji Yoshida (Kyushu Univ.)
pp. 35 - 38
ED2012-119
A Study on 0-dB Coupler Using Half-mode Groove Waveguide for Wireless Power Transmission
Seiya Mori, Mitsuyoshi Kishihara, Kensuke Okubo, Hironori Takimoto (Okayama Prefectural Univ.), Isao Ohta (Univ. of Hyogo)
pp. 39 - 44
ED2012-120
2.6GHz Broadband 40W GaN HEMT Doherty Amplifier
Norihiro Yoshimura, Naoki Watanabe, Hiroaki Deguchi, Norihiko Ui (SEDI)
pp. 45 - 48
ED2012-121
The study of SSPS GaN amplifier for high-efficiency operation by gate length
Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.)
pp. 49 - 52
ED2012-122
GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters
Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)
pp. 53 - 56
ED2012-123
Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs
Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio (Shibaura Inst. Tech.)
pp. 57 - 62
ED2012-124
Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs
Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)
pp. 63 - 68
ED2012-125
Analysis of drain leakage current in AlGaN/GaN HEMT
Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology)
pp. 69 - 74
ED2012-126
AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.)
pp. 75 - 78
ED2012-127
InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds
Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu (Tohoku Univ.)
pp. 79 - 84
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.