Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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CPM2014-130
AlN Single Crystal Growth by means of Sublimation method
Yosuke Iwasaki, Shunro Nagata, Hidetoshi Akiyama, Keiichiro Nakamura (JFE MINERAL)
pp. 1 - 4
CPM2014-131
Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4
Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 5 - 8
CPM2014-132
Critical thickness for phase separation in MOVPE-grown thick InGaN
Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui)
pp. 9 - 14
CPM2014-133
Effects of relaxation layer of AlGaN multiple quantum wells by LP-MOVPE
Kazuhiro Nakahama (Mie Univ.), Fumitsugu Fukuyo (HAMA PHOTO), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Harumasa Yoshida, Yuji Kobayashi (HAMA PHOTO)
pp. 15 - 18
CPM2014-134
Emission characteristics of InGaN-MQW structures on m-plane GaN substrates
Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.)
pp. 19 - 22
CPM2014-135
Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells
Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical)
pp. 23 - 26
CPM2014-136
The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED
Yukio Kashima, Eriko Matsuura (Marubun), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa (Toshiba Machine), Ryuichiro Kamimura, Yamato Osada (ULVAC), Sachie Fujikawa, Hideki Hirayama (RIKEN)
pp. 27 - 32
CPM2014-137
Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography
Masanori Nambu, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa Co. Ltd.), Akiko Okada (Waseda Univ.), Hidetoshi Shinohara, Hiroshi Goto (Toshiba Machine Co. Ltd.), Jun Mizuno (Waseda Univ.), Akira Usui (Furukawa Co. Ltd.)
pp. 33 - 38
CPM2014-138
Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate
Yuya Kanazawa, Shiro Toyoda, Issei Ohshima (Saitama Univ./RIKEN), Norihiko Kamata (Saitama Univ.), Yukio Kashima (Marubun), Eriko Matsuura (MARUBUN), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Takashi Ohkawa, Ryuichiro Kamimura, Yamato Osada (ULVAC), Hideki Hirayama (RIKEN)
pp. 39 - 44
CPM2014-139
Hardness and Young's modulus of InN
Yasushi Ohkubo, Momoto Deura (Tohoku Univ.), Yuki Tokumoto (Univ. Tokyo), Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga (Tohoku Univ.)
pp. 45 - 48
CPM2014-140
Relationship between First-Principles Studies and Experimental Results of [(CaFeO3)m/(LaFeO3)n] Superlattices about an Electric and Magnetic Structures and Properties.
Takahiro Oikawa, Yuta Watabe, Takaaki Inaba, Keisuke Oshima, Huaping Song, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)
pp. 49 - 53
CPM2014-141
MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz
Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.)
pp. 55 - 58
CPM2014-142
Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure
Wataru Terashima, Hideki Hirayama (RIKEN)
pp. 59 - 62
CPM2014-143
A hybrid integrated light source on Si platform using a quantum dot laser for high temperature operation
Nobuaki Hatori, Takanori Shimizu (PETRA), Makoto Okano (National Institute of Advanced Industrial Science AIST), Masashige Ishizaka, Tsuyoshi Yamamoto, Yutaka Urino (PETRA), Masahiko Mori (National Institute of Advanced Industrial Science AIST), Takahiro Nakamura (PETRA), Yasuhiko Arakawa (Univ. of Tokyo)
pp. 63 - 68
CPM2014-144
Linearly polarized nitride-based light emitting diode with multilayer subwavelength grating
Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi, Yoshiki Naoi (Univ. of Tokushima)
pp. 69 - 72
CPM2014-145
Operation of deep UV LED using superlattice p-AlGaN hole-spreading contact layer
Noritoshi Maeda, Masafumi Jo, Hideki Hirayama (RIKEN)
pp. 73 - 76
CPM2014-146
Deep UV light-emitting diodes containing a p-AlGaN contacting layer with high Al content
Masafumi Jo, Noritoshi Maeda, Hideki Hirayama (RIKEN)
pp. 77 - 80
CPM2014-147
Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu)
pp. 81 - 84
CPM2014-148
Mapping of thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy
Kenji Shiojima, Shingo Yamamoto, Yuhei Kihara (Univ. of Fukui)
pp. 85 - 90
CPM2014-149
Surface charging effects in AlGaN/GaN HEMTs induced by off-stress bias
Kenya Nishiguchi, Tamotsu Hashizume (Hokkaido Univ.)
pp. 91 - 95
CPM2014-150
MOCVD Gorwoth and characterization of nearly lattice-matched InAlN/AlGaN 2DEG heterostructures
Shu Fujita, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.)
pp. 97 - 102
CPM2014-151
Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.)
pp. 103 - 106
CPM2014-152
Enhancement of photoluminescence intensity in Eu-doped GaN by microcavity
Tomohiro Inaba, Ryuta Wakamatsu, Dong-gun Lee, Takanori Kojima, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.)
pp. 107 - 110
CPM2014-153
Effects of thermal cleaning on surface of bulk GaN substrates
Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.)
pp. 111 - 115
CPM2014-154
Fabrication of single crystalline p-i-n nanocolumns array on a sputter-deposited thin film
Tomohiro Noma, Hiroaki Hayashi, Daishi Fukushima, Yuta Konno, Ichiro Nomura, Katsumi Kishino (Sophia Univ.)
pp. 117 - 120
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.