Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2015] | [2016] | [2017] | [2018] | [2019] | [2020] | [2021] | [Japanese] / [English]
SDM2018-16
Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates
Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
pp. 1 - 4
SDM2018-17
Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition
Nguyen Xuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST-NU GaN-OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN-OIL), Mitsuhisa Ikeda, Makihara Katsunori (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Seiichi Miyazaki (Nagoya Univ.)
pp. 5 - 9
SDM2018-18
Control of SiO2/GaN Interface for High-performance GaN MOSFET
Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
pp. 11 - 14
SDM2018-19
Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors
Kazuya Yuge (SIT), Toshihide Nabatame, Yoshihiro Yoshikawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide (NIMS), Tomoji Ohishi (SIT)
pp. 15 - 18
SDM2018-20
[Invited Lecture]
Inversion channel diamond MOSFET
-- Formation of diamond MOS interface by wet annealing --
Tsubasa Matsumoto (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Takao Inokuma (Kanazawa Univ.), Satoshi Yamasaki (AIST), Norio Tokuda (Kanazawa Univ.)
pp. 19 - 22
SDM2018-21
[Invited Lecture]
Progress in Diamond Field Effect Transistors
Hiroshi Kawarada, Nobutaka Oi, Bi Te, Shoichiro Imanishi, Masayuki Iwatakaki, Taichi Yabe, Atsushi Hiraiwa (Waseda Univ.)
pp. 23 - 28
SDM2018-22
Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD
Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.)
pp. 29 - 32
SDM2018-23
Modification of Al2O3/SiC interface by oxygen radical irradiation
Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
pp. 33 - 36
SDM2018-24
First principle investigation of superlattice GeTe/Sb2Te3 phase change
Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.)
pp. 37 - 41
SDM2018-25
Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field
Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo)
pp. 43 - 46
SDM2018-26
XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
pp. 47 - 51
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.