Online edition: ISSN 2432-6380
[TOP] | [2018] | [2019] | [2020] | [2021] | [2022] | [2023] | [2024] | [Japanese] / [English]
CPM2021-49
Chemical Bath Deposition of Cu<sub>2</sub>O films on ITO/glass substrates
Taishu kamimoto, Takuma Ohmoto, Tomoaki Terasako (Ehime Univ.)
pp. 1 - 6
CPM2021-50
Vapor-Liquid-Solid Growth of ZnGa<sub>2</sub>O<sub>4</sub> Nanostructures and Their Structural and Photoluminescence Properties
Tomoaki Terasako, Takeshi Yoneda (Ehime Univ.), Naohiro Takahashi, Masakazu Yagi (Natl. INst. Technol., Kagawa Coll.)
pp. 7 - 12
CPM2021-51
Investigation of defects suppression in Cu halide thin films by emission spectroscopy
Chikashi Fujishima, Kunihiko Tanaka, Kaito Watanabe, Naoya Tujimoto (Nagaoka Univ Tech)
pp. 13 - 18
CPM2021-52
Influence of Annealing on Ultraviolet Light Detecting Properties of PEDOT:PSS/ZnO Nanorods/ZnO:Ga Heterostructures
Kohei Kobayashi, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)
pp. 19 - 24
CPM2021-53
[Encouragement Talk]
Optimization of buried growth and optical properties for nanowire-based light emitter
Yoshiya Miyamoto, Naoki Sone, Renji Okuda, Weifang Lu, Kazuma Ito, Shiori Yamamura, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.)
pp. 25 - 28
CPM2021-54
Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy
Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.)
pp. 29 - 32
CPM2021-55
Waveguide loss measurements in III-nitride laser structures
Kenta Ogasawara (KIT), Shigeta Sakai, Tadashi Okumura, Koichi Naniwae (Ushio Inc), Atsushi A. Yamaguchi (KIT)
pp. 33 - 36
CPM2021-56
Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy
Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT)
pp. 37 - 40
CPM2021-57
Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells
Shunya Hakamata, Takashi Fujita, Ryuichi Watanabe, Atsushi A Yamaguchi (KIT)
pp. 41 - 44
CPM2021-58
Optical characterization of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures
Liyang Li, Kohei Shima (Tohoku Univ.), Mizuki Yamanaka (Nagoya Inst. Tech.), Kazunobu Kojima (Tohoku Univ.), Takashi Egawa (Nagoya Inst. Tech.), Akira Uedono (Univ. of Tsukuba), Ishibashi Shoji (AIST), Tetsuya Takeuchi (Meijo Univ.), Makoto Miyoshi (Nagoya Inst. Tech.), Shigefusa Chichibu (Tohoku Univ.)
pp. 45 - 50
CPM2021-59
Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire
Kota Shibutani, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya, Toru Akiyama, Hideto Miyake (Mie Univ.)
pp. 51 - 54
CPM2021-60
Growth of 220-nm-band-emission AlGaN Quantum Wells Using Annealed Sputtered AlN Template
Shoya Ishihara, Shigeyuki Kuboya, Kanako Shojiki, Kenjiro Uesugi, Xiao Shiyu, Hideto Miyake (Mie Univ.)
pp. 55 - 58
CPM2021-61
Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system
Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT)
pp. 59 - 62
CPM2021-62
Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy
Kenji Shiojima (Univ. of Fukui), Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu (Fuji electric co.)
pp. 63 - 66
CPM2021-63
Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy
Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui)
pp. 67 - 70
CPM2021-64
Interface charge engineering in normally-off AlTiO/AlGaN/GaN field-effect transistors
Duong Dai Nguyen, Takehiro Isoda, Yuchen Deng, Toshi-kazu Suzuki (JAIST)
pp. 71 - 74
CPM2021-65
Estimation of electrical characteristics of normally-off type AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD
Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech)
pp. 75 - 78
CPM2021-66
High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT)
pp. 79 - 82
CPM2021-67
Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template
Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.)
pp. 83 - 86
CPM2021-68
Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching
Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.)
pp. 87 - 90
CPM2021-69
Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching.
Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.)
pp. 91 - 94
CPM2021-70
Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer
Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.)
pp. 95 - 98
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.