IEICE Technical Report

Online edition: ISSN 2432-6380

Volume 121, Number 365

Silicon Device and Materials

Workshop Date : 2022-01-31 / Issue Date : 2022-01-24

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Table of contents

SDM2021-68
[Invited Talk] ****
Tomoya Saito, Takashi Ito, Yasuhiko Taito, Kenichiro Sonoda, Genta Watanabe, Ken Matsubara, Akihiko Kanda, Takahiro Shimoi, Koichi Takeda, Takashi Kono (Renesas)
pp. 1 - 4

SDM2021-69
[Invited Talk] Single-digit-nanometer magnetic tunnel junction technology for high-capacity STT-MRAM
Butsurin Jinnai, Junta Igarashi, Takanobu Shinoda, Kyota Watanabe, Takuya Funatsu, Hideo Sato, Shunsuke Fukami, Hideo Ohno (Tohoku Univ.)
pp. 5 - 8

SDM2021-70
[Invited Talk] ****
Reika Ichihara (Kioxia)
pp. 9 - 11

SDM2021-71
[Invited Talk] ****
Kei Sumita, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo)
pp. 12 - 15

SDM2021-72
[Invited Talk] Novel Analog in-Memory Computing with < 1nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology
Yoshiyuki Kurokawa, Haruyuki Baba, Satoru Ohshita, Toshiki Hamada, Yoshinori Ando, Ryota Hodo, Toshikazu Ono, Takashi Hirose, Hitoshi Kunitake, Tsutomu Murakawa (Semiconductor Energy Lab.), Toru Nakura (Fukuoka Univ.), Masaharu Kobayashi (Tokyo Univ.), Hiroshi Yoshida, Min-Cheng Chen (PSMC), Ming-Han Liao (National Taiwan Univ.), Shou-Zen Chang (PSMC), Shunpei Yamazaki (Semiconductor Energy Lab.)
pp. 16 - 19

SDM2021-73
[Invited Talk] ****
Keiichi Nakazawa, Junpei Yamamoto, Shigetaka Mori, Shintaro Okamoto, Akito Shimizu, Koichi Baba, Nobutoshi Fujii, Mutsuo Uehara, Katsunori Hiramatsu, Hideomi Kumano, Akira Matsumoto, Koichiro Zaitsu, Hidetoshi Ohnuma, Keiji Tatani, Tomoyuki Hirano, Hayato Iwamoto (Sony Semiconductor Solutions)
pp. 20 - 23

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan