IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2026-03-13 / Issue Date : 2026-03-06

SDM2025-72
[Invited Talk] Post-Cu CMP leakage suppression using sequential small molecular inhibitor treatment
Takumi Nishinobo, Kai-Hung Yu, Ryota Yonezawa, Hidenao Suzuki, Hirokazu Aizawa (Tokyo Electron Limited)
pp. 1 - 3

SDM2025-73
[Invited Talk] CMP and activation-free direct bonding using ALD-Al2O3
Hayato Kitagawa, Taisuke Yamamoto, Fumihiro Inoue (Yokohama National Univ.)
pp. 4 - 7

SDM2025-74
[Invited Talk] Massive Orthogonal Die Stacking Technology: MOSAIC
Atsutake Kosuge (Univ. Tokyo)
pp. 8 - 11

SDM2025-75
[Invited Talk] Transformation From 2D Shuttle Chips to 3D-IC -- Via-last TSV Formation/Heterogeneous 3D Integration with Photosensitive Temporary Adhesives --
Akihiro Tominaga, Jiayi Shen, Takafumi Fukushima (Tohoku University)
pp. 12 - 15

SDM2025-76
[Invited Talk] Face-to-Back Chip-on-Wafer Cu-Cu Hybrid Bonding Process for Three Layer-Stacked 3D Heterogeneous Integration
Akihiro Urata, Itsuki Imanishi, Masanori Chiyozono, Toru Osako, Kan Shimizu, Yoshihisa Kagawa, Masashi Nakazawa,
pp. 16 - 19

SDM2025-77
[Invited Talk] Fabrication of Panel-Level Redistribution Interposer With L/S=1.5/1.5 μm Multilayer Fine Wiring and Solutions to Issues of Miniaturization
Masashi Minami, Sachiko Matsushita, Sadaaki Katoh (Resonac)
pp. 20 - 23

SDM2025-78
[Invited Talk] Graphite sheet embedded in an organic flip-chip package for heat spreading -- NA --
Keiji Matsumoto (IBM-J)
pp. 24 - 27

SDM2025-79
[Invited Talk] Highly Oriented Hexagonal Boron Nitride Lateral Growth Using High-Density Plasma-Excited Nitrogen Active Species
Yukihiro Muta, Masahito Sugiura, Takashi Matsumoto (Tokyo Electron Technology Solutions)
pp. 28 - 30

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan