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Technical Committee on Electronic Information Displays (EID) [schedule] [select]
Chair Tomokazu Shiga (Univ. of Electro-Comm.)
Vice Chair Mutsumi Kimura (Ryukoku Univ.), Yuko Kominami (Shizuoka Univ.)
Secretary Munekazu Date (NTT), Masahiro Yamaguchi (Tokyo Inst. of Tech.)
Assistant Rumiko Yamaguchi (Akita Univ.), Hiroyuki Nitta (Japan Display), Mitsuru Nakata (NHK), Takashi Kojiri (ZEON), Ryosuke Nonaka (Toshiba)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.)

Conference Date Mon, Dec 12, 2016 09:30 - 17:15
Topics Fabrication and Evaluation of Silicon Related Materials 
Conference Place  
Contact
Person
奈良先端科学技術大学院大学 物質創成科学研究科
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Mon, Dec 12 AM 
09:30 - 17:15
(1) 09:30-09:45 Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cells EID2016-9 SDM2016-90 Song Zhang, Yasuaki Yishikawa, Itaru Raifuku, Tiphaine Bourgeteau, Yukiharu Uraoka (NAIST), Erik Johnson, Martin Foldyna, Yvan Bonnassieux, Pere Roca i Cabarrocas (Ecole polytechnique)
(2) 09:45-10:00 Evaluation of the Band Offset at FeS2/NiOx Junction for FeS2-Pyrite Heterojunction Solar Cell EID2016-10 SDM2016-91 Yusuke Kawamura, Yasuaki Ishikawa, Shunsuke Uchiyama (NAIST), Yoshitaro Nose (Kyoto Univ.), Yukiharu Uraoka (NAIST)
(3) 10:00-10:15 Analysis of the cause of high performance IGZO thin film transistor using SrTa2O6 as gate insulator Kento Oikawa, Mami N. Fujii, Juan Paolo Bermundo (NAIST), Kiyoshi Uchiyama (Tsuruoka College), Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
(4) 10:15-10:30 Characterization of GaxSn1-xO thin film by the mist CVD method EID2016-11 SDM2016-92 Hiroki Fukushima, Hiromasa Yuge, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.)
  10:30-10:45 Break ( 15 min. )
(5) 10:45-11:00 Research and development of new rare metal-free AOS-TFT EID2016-12 SDM2016-93 Kenta Umeda, Yuta Kato, Daiki Nishimoto, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ)
(6) 11:00-11:15 Influence of Electrodes for Magnetoresistance Effect in IGZO Thin Film Devices EID2016-13 SDM2016-94 Asuka Fukawa, Ryuki Nomura, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(7) 11:15-11:30 Characteristic Evaluation of GaSnO Thin Film by Hall Measurement EID2016-14 SDM2016-95 Kota Imanishi, Asuka hukawa, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ)
(8) 11:30-11:45 Stimulus Performance of Thin-Film Biological Stimulation Devices EID2016-15 SDM2016-96 Keisuke Tomioka, Kouhei Miyake, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(9) 11:45-12:00 Wireless power transmission using a thin film coil EID2016-16 SDM2016-97 Yuuki Yamamoto, Keigo Misawa, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
  12:00-13:00 Lunch ( 60 min. )
(10) 13:00-13:30 [Invited Talk]
The tolerance of data retention characteristics to external stresses in metal oxide resistive random access memory EID2016-17 SDM2016-98
Kentaro Kinoshita (Tottori Univ.)
(11) 13:30-13:45 First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film EID2016-18 SDM2016-99 Takumi Moriyama, Sohta Hida (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)
(12) 13:45-14:00 Relationship between memory characteristics and Schottky parameters in Pt/Nb:STO junction Toshiki Shiomi, Yuuto Hagihara, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)
(13) 14:00-14:15 CMOS Inverter Consisting of Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Poly-Si TFTs on Glass Substrate EID2016-19 SDM2016-100 Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.)
(14) 14:15-14:30 Thermodynamic Study on Crystallization of Group-IV Amorphous Thin Film by Flash Lamp Annealing EID2016-20 SDM2016-101 Naoto Matsuo, Naoki Yosioka, Akira Heya (Univ Hyogo), Yosiaki Nakamura, Takehiko Yokomori, Masaki Yosioka (USIO INK.)
(15) 14:30-14:45 Island shape a-Ge film by FLA crystallization EID2016-21 SDM2016-102 Naoki yoshioka, Akira Heya, Naoto matsuo (Univ.of Hyogo), Yoshiaki Nakamura, Takehiko Yokomori, Masaki Yoshioka (USHIO INC)
(16) 14:45-15:00 Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC EID2016-22 SDM2016-103 Taro Enokizono, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.)
  15:00-15:15 Break ( 15 min. )
(17) 15:15-15:30 Study of the inverter circuit of DNA/Si-MOSFET due to the parasitic capacitance control EID2016-23 SDM2016-104 Hibiki Nakano, Matsuo Naoto, Akira Heya, Tadao Takada, Kazusige Yamana (Univ. of Hyogo), Tadashi Sato, Shin Yokoyama (Univ. Hiroshima)
(18) 15:30-15:45 Decomposition of Pentacene Molecules and Formation of Graphene-Based Organic Films Using Heated Catalyst EID2016-24 SDM2016-105 Akira Heya, Naoto Matsuo (Univ. of Hyogo)
(19) 15:45-16:00 Thermoelectric Properties of amorphous-InGaZnO Thin Film EID2016-25 SDM2016-106 Yuki Tawa, Mutsunori Uenuma, Yuta Fujimoto, Daiki Senaha, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
(20) 16:00-16:15 Letter Recognition of Cellar Neural Network using Thin Film Transistors EID2016-26 SDM2016-107 Sumio Sugisaki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(21) 16:15-16:30 Characterization of planar synapses with GTO thin films EID2016-27 SDM2016-108 Keisuke Ikushima, Kenta Umeda, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(22) 16:30-16:45 Research of capacitor-type synapses in the hardware of the neural network EID2016-28 SDM2016-109 Koki Watada, Hiroki Nakanishi, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.)
(23) 16:45-17:00 Development of Synapses in Neural Networks using a-IGZO Thin Films EID2016-29 SDM2016-110 Toshimasa Hori, Ryo Tanaka, Yuki Koga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(24) 17:00-17:15 Analog circuit simulation of cellular neural network EID2016-30 SDM2016-111 Tomoharu Yokoyama, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ)

Announcement for Speakers
General TalkEach speech will have 12 minutes for presentation and 3 minutes for discussion.
Invited TalkEach speech will have 25 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
EID Technical Committee on Electronic Information Displays (EID)   [Latest Schedule]
Contact Address  
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: e3 


Last modified: 2016-10-26 13:59:55


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