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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2007)
Search Results: Keywords 'from:2007-12-14 to:2007-12-14'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2007-12-14 10:00 |
Nara | Nara Institute Science and Technology | Acceleration of Crystal Growth by Pulsed Rapid Thermal Annealing using Ni-Ferritin Masahiro Ochi, Yuuta Sugawara, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (Matsushita Electric Industrial Co.,Ltd., NAIST)  SDM2007-222 |
Previously, we reported the fabrication method of high quality poly-Si thin film by using Ni core of ferritin with a dia... [more] | SDM2007-222 pp.1-4 |
| SDM | 2007-12-14 10:20 |
Nara | Nara Institute Science and Technology | Shallow Junction Formed by Rapid Heat Treatment using Semiconductor Laser Toshiyuki Sameshima (Tokyo A&T Univ.), Naoki Sano (Hightec Systems Co.), M.Naito (Nissin Ion Equipment Co. Ltd) SDM2007-223 |
[more] | SDM2007-223 pp.5-8 |
| SDM | 2007-12-14 10:40 |
Nara | Nara Institute Science and Technology | Influence of laser-plasma x-ray irradiation on crystallization of a-Si film by excimer laser annealing Yasuyuki Takanashi, Naoto Matsuo, Kazuya Uejukkoku, Akira Heya (Dept.Mat.Sci.&Chem.,Univ.Hyogo), Sho Amano, Shuji Miyamoto, Takayasu Mochizuki (LASTI,Univ.Hyogo) SDM2007-224 |
We investigated the crystallization by Laser Plasma Soft-X-ray (LPX) irradiation followed by Excimer Laser Annealing (EL... [more] | SDM2007-224 pp.9-13 |
| SDM | 2007-12-14 11:00 |
Nara | Nara Institute Science and Technology | Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs using Device Simulation Tsuyoshi Kuzuoka, Hiroshi Tsuji, Masaharu Kirihara, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2007-225 |
Capacitance-voltage characteristics of short channel Poly-Si TFTs containing only a single grain boundary were investiga... [more] | SDM2007-225 pp.15-18 |
| SDM | 2007-12-14 11:20 |
Nara | Nara Institute Science and Technology | Electrical conduction characteristics of NiO thin films for ReRAM Ryota Suzuki, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2007-226 |
Since NiO thin films have resistive switching characteristics, NiO is one of the attractive materials for ReRAM. In this... [more] | SDM2007-226 pp.19-22 |
| SDM | 2007-12-14 11:40 |
Nara | Nara Institute Science and Technology | Charge-Discharge Characteristics of Bio-Nano Dot Floating Gate MOS Devices with Ultrathin Tunnnel Oxide Tomoki Umeda, Hiroshi Yano, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (NAIST,Matsushita Electric Industrial Co.) |
[more] | |
| SDM | 2007-12-14 13:00 |
Nara | Nara Institute Science and Technology | Effective Activation of Phosphorus atom in Si film using ELA Takashi Noguchi (Univ. of Ryukyus) SDM2007-227 |
[more] | SDM2007-227 pp.23-26 |
| SDM | 2007-12-14 13:30 |
Nara | Nara Institute Science and Technology | In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-228 |
In-situ measurement technique of temperature profile in Si wafer during millisecond rapid thermal annealing has been dev... [more] | SDM2007-228 pp.27-29 |
| SDM | 2007-12-14 13:50 |
Nara | Nara Institute Science and Technology | Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.) SDM2007-229 |
We succeeded in the observation of dislocation motion in a thin Si1-xGex film (thickness = 56 nm and x = 0.24) on a Si s... [more] | SDM2007-229 pp.31-34 |
| SDM | 2007-12-14 14:10 |
Nara | Nara Institute Science and Technology | Axial orientation of epitaxially grown Fe3Si on Ge(111) Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.) SDM2007-230 |
The axial orientation of epitaxially grown Fe3Si on Ge(111) has been investigated by Rutherford Backscattering spectrosc... [more] | SDM2007-230 pp.35-38 |
| SDM | 2007-12-14 14:30 |
Nara | Nara Institute Science and Technology | Ge n+/p Junction Formation with Xe+ Preamorphization Implantation Tetuya Fukunaga, Kentaro Shibahara (Hiroshima Univ. Grad. Sch.) |
[more] | |
| SDM | 2007-12-14 14:50 |
Nara | Nara Institute Science and Technology | Simulation of light propagation on silicide photonic crystals with conjugated inversion lattices Shunsuke Kunimatsu (Kyoto Univ.), Yoshikazu Terai (Osaka Univ.), Yoshihito Maeda (Kyoto Univ.) SDM2007-231 |
b-FeSi2 with a high refractive index of more than 5.2 has been expected application to high contrast photonic crystals. ... [more] | SDM2007-231 pp.39-42 |
| SDM | 2007-12-14 15:10 |
Nara | Nara Institute Science and Technology | Interface modification by NH3 plasma in SiNx passivation for solar cell Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-232 |
The effect of NH3 plasma treatment on p-type (Fz) Si substrates was investigated relating with the post annealing proces... [more] | SDM2007-232 pp.43-46 |
| SDM | 2007-12-14 15:50 |
Nara | Nara Institute Science and Technology | [Invited Talk]
Optical properties of Si nanocrystals and their possible applications Minoru Fujii (Kobe Univ.) |
[more] | |
| SDM | 2007-12-14 16:20 |
Nara | Nara Institute Science and Technology | Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes Toru Hiyoshi (Kyoto Univ.), Tsutomu Hori (Hitachi), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2007-233 |
A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. A mesa structure was forme... [more] | SDM2007-233 pp.47-50 |
| SDM | 2007-12-14 16:40 |
Nara | Nara Institute Science and Technology | Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) SDM2007-234 |
Charge-pumping measurements were conducted on n-channel and p-channel 4H-SiC MOSFET’s with and without NO annealing. The... [more] | SDM2007-234 pp.51-54 |
| SDM | 2007-12-14 17:00 |
Nara | Nara Institute Science and Technology | Neural Network of Device Level using Poly-Si TFT Ryo Onodera, Tomohiro Kasakawa, Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.), Hiroyuki Hara, Satoshi Inoue (Seiko Epson Corp.) SDM2007-235 |
We have developed a neural network of device level using TFT. Extreamly simplified circuit configulation is achieved usi... [more] | SDM2007-235 pp.55-58 |
| SDM | 2007-12-14 17:20 |
Nara | Nara Institute Science and Technology | Fabrication and Physical Properties of Ferroelectric Thin Films by Alcohol-related Materials Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) SDM2007-236 |
The inkjet technique is devised as one of the thin film formation method of the next generation. We synthesized the ferr... [more] | SDM2007-236 pp.59-62 |
| SDM | 2007-12-14 17:40 |
Nara | Nara Institute Science and Technology | Active-Matrix Driving of Magneto Optic Spatial Light Modulator using Poly-Si TFT Hideo Oi, Mutsumi Kimura (Ryukoku Univ.), Yoichi Suzuki, Syogo Ishikawa, Hiromitsu Umezawa (FDK), Hiroyuki Takagi, Kim Joo-Young, Hironaga Uchida, Mitsuteru Inoue (Toyohashi Univ.of Tech.) SDM2007-237 |
We have investigated active-matrix driving of magneto optic spatial light modulators using poly-Si TFTs for application ... [more] | SDM2007-237 pp.63-66 |
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