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Technical Committee on Component Parts and Materials (CPM) (Searched in: 2015)
Search Results: Keywords 'from:2015-05-28 to:2015-05-28'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, CPM, SDM | 2015-05-28 13:00 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Synthesis of graphenes by chemical vapor deposition using liquid precursor Naoki Kishi, Takaaki Iwata, Kazuki Iwama, Jianfeng Bao, Liu Huito, Tetsuo Soga (NITech)  ED2015-16 CPM2015-1 SDM2015-18 |
The synthesis of graphenes on Ni foils by thermal chemical vapor deposition (CVD) using ethanol as a liquid precursor ha... [more] | ED2015-16 CPM2015-1 SDM2015-18 pp.1-4 |
| ED, CPM, SDM | 2015-05-28 13:25 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Multilayer layer graphene synthesis by Microwave Surface Wave Plasma CVD, and high quality according to ultraviolet light shading Susumu Ichimura, Hideo Uchida, Koichi Wakita (Chubu Univ.), Yasuhiko Hayashi (Okayama Univ.), Masayoshi Umeno (Chubu Univ.) ED2015-17 CPM2015-2 SDM2015-19 |
This study is aimed at applying the graphene as biosensor and biomaterials.From the viewpoint of reliability and electri... [more] | ED2015-17 CPM2015-2 SDM2015-19 pp.5-10 |
| ED, CPM, SDM | 2015-05-28 13:50 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Study on self-assembled monolayers by the immersion method on SiC substrate Yuya Suzuki, Yuji Hirose, Shohei Tamaoki, Reina Miyagawa, Takatoshi Kinoshita, Osamu Eryu (NiTech) ED2015-18 CPM2015-3 SDM2015-20 |
(To be available after the conference date) [more] | ED2015-18 CPM2015-3 SDM2015-20 pp.11-15 |
| ED, CPM, SDM | 2015-05-28 14:15 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Optical properties of InGaN nanoplates grown by molecular beam epitaxy Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia UNiv.), Kazuhiko Hara (Shizuoka Univ.) ED2015-19 CPM2015-4 SDM2015-21 |
We fabricated InGaN nanoplates on top of GaN nanocolumns by radio-frequency plasma-assisted molecular beam epitaxy. The ... [more] | ED2015-19 CPM2015-4 SDM2015-21 pp.17-19 |
| ED, CPM, SDM | 2015-05-28 14:50 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Semi-polar GaN (10-13) grown on nominal Si (001) substrate with sputtered AlN buffer layer Hojun Lee, Tadashi Mitsunari, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
[more] | |
| ED, CPM, SDM | 2015-05-28 15:15 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Control of N composition of GaAsN alloy grown by surface nitridation Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2015-20 CPM2015-5 SDM2015-22 |
We researched growth conditions effect for N composition and luminescence property on dilute nitride GaAsN alloy grown b... [more] | ED2015-20 CPM2015-5 SDM2015-22 pp.21-26 |
| ED, CPM, SDM | 2015-05-28 15:40 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Growth and preliminary MOSFETs of corundum-structured oxide semiconductors Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.) ED2015-21 CPM2015-6 SDM2015-23 |
Growth of corundum-structured oxide semiconductors has been demonstrated using appropriate buffer layers on sapphire by ... [more] | ED2015-21 CPM2015-6 SDM2015-23 pp.27-30 |
| ED, CPM, SDM | 2015-05-28 16:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-22 CPM2015-7 SDM2015-24 |
High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 ̅... [more] | ED2015-22 CPM2015-7 SDM2015-24 pp.31-34 |
| ED, CPM, SDM | 2015-05-28 16:40 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25 |
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] | ED2015-23 CPM2015-8 SDM2015-25 pp.35-39 |
| ED, CPM, SDM | 2015-05-28 17:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26 |
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] | ED2015-24 CPM2015-9 SDM2015-26 pp.41-44 |
| ED, CPM, SDM | 2015-05-28 17:30 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Possibility of Chirality Control for In-Plane Oriented Single-Walled Carbon Nanotubes by Free Electron Laser Irradiation Daiki Kawaguchi, Keisuke Yoshida, Miu Kobayashi, Shinnosuke Harumiya, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) ED2015-25 CPM2015-10 SDM2015-27 |
We report the control of chirality and in-plane oriented of single-walled carbon nanotube (SWNT) during growth. The SWNT... [more] | ED2015-25 CPM2015-10 SDM2015-27 pp.45-50 |
| ED, CPM, SDM | 2015-05-28 17:55 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Optimization of Growth Condition in Co/Pt/r-oriented Cr2O3 Multilayer on Sapphire Substrates Takashi Sumida, Kosuke Hashimoto, Shinjiro Fukui, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) ED2015-26 CPM2015-11 SDM2015-28 |
We report the crystal structures and magnetic properties of [Pt/Co]3/Pt/r-Cr2O3 multilayers fabricated by DC-RF magnetro... [more] | ED2015-26 CPM2015-11 SDM2015-28 pp.51-56 |
| ED, CPM, SDM | 2015-05-29 08:40 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Glass-tube-free ion image sensors based on calculating the solution potential from the sensitivity difference between pixels Shin Watanabe, Fumihiro Dasai, Tatsuya Iwata, Makoto Ishida, Toshiaki Hattori, Kazuaki Sawada (TUT) ED2015-27 CPM2015-12 SDM2015-29 |
For electrochemical measurements, a reference electrode is used to fix solution potential. A typical reference electrode... [more] | ED2015-27 CPM2015-12 SDM2015-29 pp.57-61 |
| ED, CPM, SDM | 2015-05-29 09:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-28 CPM2015-13 SDM2015-30 |
[more] | ED2015-28 CPM2015-13 SDM2015-30 pp.63-66 |
| ED, CPM, SDM | 2015-05-29 09:30 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Crystal Structure and Oxygen Permeation Properties of Oxygen Permeable SrFeO3-δ Isao Kagomiya, Shiro Shirakawa, Ken-ichi Kakimoto (NITech) ED2015-29 CPM2015-14 SDM2015-31 |
We investigated the oxygen permeability and the crystal structure of the SrFeO3-δ(δ= ～0.25)which possesses crystal aniso... [more] | ED2015-29 CPM2015-14 SDM2015-31 pp.67-69 |
| ED, CPM, SDM | 2015-05-29 09:55 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32 |
The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parame... [more] | ED2015-30 CPM2015-15 SDM2015-32 pp.71-76 |
| ED, CPM, SDM | 2015-05-29 10:30 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Effects of annealing on properties of electrochemically deposited CuxZnyS thin films Tong Bayingaerdi, Masaya Ichimura (NITech) ED2015-31 CPM2015-16 SDM2015-33 |
[more] | ED2015-31 CPM2015-16 SDM2015-33 pp.77-80 |
| ED, CPM, SDM | 2015-05-29 10:55 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Influence of stirring on SnS deposition using chemical bath deposition Taishi Suzuki, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.) ED2015-32 CPM2015-17 SDM2015-34 |
Tin sulfide has been deposited on glasses using chemical bath deposition (CBD). SnS glows on glasses in a beaker contain... [more] | ED2015-32 CPM2015-17 SDM2015-34 pp.81-84 |
| ED, CPM, SDM | 2015-05-29 11:20 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Fabrication of Cu2O/Fe-O heterojunction solar cells by electrodeposition Zhang Chaolong (NIT), Junie Jhon M. Vequizo (TTI), Masaya Ichimura (NIT) ED2015-33 CPM2015-18 SDM2015-35 |
[more] | ED2015-33 CPM2015-18 SDM2015-35 pp.85-90 |
| ED, CPM, SDM | 2015-05-29 11:45 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Sulfur annealing of electrochemically deposited iron sulfide thin films and application to heterojunction cells with ZnO Takahiro Kajima (Nagoya Inst. of Tech.), Shoichi Kawai (DENSO CORP.), Masaya Ichimura (Nagoya Inst. of Tech.) ED2015-34 CPM2015-19 SDM2015-36 |
The electrochemical deposition (ECD) is a method to deposit thin films by reducing ions in an aqueous solution. FeS2 (py... [more] | ED2015-34 CPM2015-19 SDM2015-36 pp.91-95 |
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