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| Chair |
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Tetsuro Endo (Tohoku Univ.) |
| Vice Chair |
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Yasuo Nara (Fujitsu Semiconductor) |
| Secretary |
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Yukinori Ono (NTT), Shintaro Nomura (Univ. of Tsukuba) |
| Assistant |
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Yoshitaka Sasago (Hitachi) |
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| Conference Date |
Mon, Mar 5, 2012 10:00 - 16:30 |
| Topics |
Wiring and Assembly Technology, etc |
| Conference Place |
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| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Mon, Mar 5 AM
10:00 - 16:30 |
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10:00-10:05 |
Opening Address ( 5 min. ) |
| (1) |
10:05-10:50 |
[Keynote Address]
Development of Ultra Low Voltage Devices utilizing BEOL Process  SDM2011-176 |
Shin'ichiro Kimura (LEAP) |
| (2) |
10:50-11:20 |
Basic Performance of a Logic-IP Compatible eDRAM with Cylinder Capacitors in Low-k/Cu BEOL Layers SDM2011-177 |
Ippei Kume, Naoya Inoue, Ken'ichiro Hijioka, Jun Kawahara, Koichi Takeda, Naoya Furutake, Hiroki Shirai, Kenya Kazama, Shin'ichi Kuwabara, Msasatoshi Watarai, Takashi Sakoh, Toshifumi Takahashi, Takashi Ogura, Toshiji Taiji, Yoshiko Kasama (Renesas Electronics) |
| (3) |
11:20-11:50 |
Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design SDM2011-178 |
Kishou Kaneko, Naoya Inoue, Shinobu Saito, Naoya Furutake, Hiroshi Sunamura, Jun Kawahara, Masami Hane, Yoshihiro Hayashi (Renesas Electronics) |
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11:50-13:00 |
Lunch Break ( 70 min. ) |
| (4) |
13:00-13:30 |
Initial Growth Observation of Multilayer Graphene on SiO2/Si substrate using Raman Spectroscopy and XPS SDM2011-179 |
Yoshihiro Ojiro, Shuichi Ogawa (Tohoku Univ.), Manabu Inukai (JASRI), Motonobu Sato (AIST), Eiji Ikenaga, Takayuki Muro (JASRI), Mizuhisa Nihei (AIST), Yuji Takakuwa (Tohoku Univ.), Naoki Yokoyama (AIST) |
| (5) |
13:30-14:00 |
Single-layered barrier/liner Co(W) by ALD/CVD for next generation ULSI-Cu interconnect SDM2011-180 |
Hideharu Shimizu (Taiyo Nippon Sanso/Tokyo Univ.), Kohei Shima, Takeshi Momose (Tokyo Univ.), Yoshihiko Kobayashi (Taiyo Nippon Sanso), Yukihiro Shimogaki (Tokyo Univ.) |
| (6) |
14:00-14:30 |
Evaluation of additives effects in copper electroplating solution by rapid exchange using microfluidic reactor SDM2011-181 |
Takeyasu Saito, Yutaka Miyamoto, Sunao Hattori, Naoki Okamoto, Kazuo Kondo (Osaka Prefecture Univ.) |
| |
14:30-14:55 |
Break ( 25 min. ) |
| (7) |
14:55-15:25 |
Formation of conformal barrier layer by electroless plating for TSV of 3D-LSI SDM2011-182 |
Ryohei Arima, Hiroshi Miyake, Fumihiro Inoue, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.) |
| (8) |
15:25-15:55 |
Influence of Via Stress on Surface Micro-roughness-induced Leakage Current in Through-Silicon Via Interconnects SDM2011-183 |
Hideki Kitada (Univ. of Tokyo/Fujitsu Lab.), Nobuhide Maeda, Koji Fujimoto, Shoichi Kodama, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima (Univ. of Tokyo/Fujitsu Lab.), Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo) |
| (9) |
15:55-16:25 |
Characterization of Local Strain around Through Silicon Via Interconnect in Wafer-on-wafer Structures SDM2011-184 |
Osamu Nakatsuka (Nagoya Univ.), Hideki Kitada, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima, Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo), Shigeaki Zaima (Nagoya Univ.) |
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16:25-16:30 |
Closing Address ( 5 min. ) |
| Announcement for Speakers |
| General Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
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| Contact Address |
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E- : o         |
Last modified: 2012-02-14 15:50:45
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