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Technical Committee on Component Parts and Materials (CPM) (Searched in: 2013)
Search Results: Keywords 'from:2013-08-01 to:2013-08-01'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2013-08-01 13:30 |
Hokkaido | Formation of chemically inert interface between Al and Al3Nb thin films Atsushi Noya, Mayumi B. Takeyama (Kitami Inst. of Tech.)  CPM2013-46 |
Abstract We propose a chemically inert interface, at which no solid-phase reaction takes place, between Al and an under... [more] | CPM2013-46 pp.35-38 |
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| CPM | 2013-08-01 13:50 |
Hokkaido | GaAsN Solar Cell for Super High Efficient Multijunction Solar Cell Kazuma Ikeda, Nobuaki Kojima, Yoshio Oshita, Masafumi Yamaguchi (Toyota Technological Inst.) CPM2013-40 |
The carrier mobility and lifetime of GaAsN which have been considered to be determined by N composition were improved by... [more] | CPM2013-40 pp.7-10 |
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| CPM | 2013-08-01 14:10 |
Hokkaido | Growth of (In)GaAsN thin films for Ultra High Efficiency Multi-Junction Solar Cells by Atomic Layer Epitaxy Hidetoshi Suzuki, Tomohiro Haraguchi, Toshihiro Yamauchi, Atsuhiko Fukuyama, Tetsuo Ikari (Univ. of Miyazaki) CPM2013-41 |
High quality GaAsN thin films were fabricated by atomic layer epitaxy (ALE). The effects of gas flow sequences on self-... [more] |
CPM2013-41 pp.11-15 |
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| CPM | 2013-08-01 14:30 |
Hokkaido | Formation Mechanism of Cubic-SiC by Carbonization of Si Surface Yukimune Watanabe, Kiichi Kamimura (Shinshu Univ.) CPM2013-42 |
SiC materials for high-power devices and high-frequency devices are actively developed. In this study, we focus on a cub... [more] | CPM2013-42 pp.17-20 |
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| CPM | 2013-08-01 15:05 |
Hokkaido | Development of high precision rotary encoder Takashi Fujimoto (Tamagawa seiki), Kiichi Kamimura (Shinshu Univ) CPM2013-43 |
[more] | CPM2013-43 pp.21-24 |
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| CPM | 2013-08-01 15:25 |
Hokkaido | Application of CNT in cathode of lateral field emission lamp Yu Miura, Tomomasa Satoh, Takashi Hirate (Kanagawa Univ.) CPM2013-44 |
In an lateral field emission type luminescent device using conductive ZnO nanorods(NRs) array, carbon nanotubes (CNT) ha... [more] | CPM2013-44 pp.25-28 |
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| CPM | 2013-08-01 15:45 |
Hokkaido | Changes in operating charcteristics of OLED by the deposition of upper electrode films by sputtering Yoichi Hoshi, Shin-ichi Kobayashi, Takayuki Uchida (Tokyo Polytechnic Univ.), Hidehiko Shimizu (Niigata Univ.) CPM2013-45 |
In this study, we investigated the affect of the sputter-deposition of upper electrode films on the photo-emission perfo... [more] | CPM2013-45 pp.29-34 |
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| CPM | 2013-08-01 16:05 |
Hokkaido | Present R&D Status and Future of High Efficiency Solar Cells Masafumi Yamaguchi (Toyota Technological Inst.) CPM2013-39 |
Present R&D status of various types of high efficiency solar cells such as crystalline Si, thin film Si, CIGS, CdTe, III... [more] | CPM2013-39 pp.1-6 |
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| CPM | 2013-08-02 09:20 |
Hokkaido | Development of Substrate Heater System of Cold-Wall Chemical Vapor Deposition Equipment for Improvement of Single-Walled Nanotubes Quality Yusaku Tsuda, Takumi Sagara, Kenichi Yamakawa, Keisuke Yoshida, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.) CPM2013-47 |
We have developed an alcohol catalytic chemical vapor deposition (ACCVD) process in order to fabricate nanoscaled electr... [more] | CPM2013-47 pp.39-44 |
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| CPM | 2013-08-02 09:40 |
Hokkaido | Preparation and Evaluation of ZnO-Based Transparent Conducting Thin Films Satoru Noge, Kentaro Konishi (Numazu NCT) CPM2013-48 |
[more] | CPM2013-48 pp.45-49 |
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| CPM | 2013-08-02 10:00 |
Hokkaido | Crystalline structure of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O produced by a Pt-catalyzed H2-O2 reaction Naoya Yamaguchi, Tomohiko Takeuchi, Tomoki Nakamura, Yuki Ohashi, Eichi Nagatomi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2013-49 |
Crystalline structure of ZnO thin films, which were grown on a-plane sapphire substrates through a reaction between dime... [more] | CPM2013-49 pp.51-56 |
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| CPM | 2013-08-02 10:35 |
Hokkaido | Examination of the switchable mirror effect by the metal added Mg-based thin films Hidehiko Shimizu, Masato Atobe, Tatsuya Shimoda, Kazuki Kobayashi, Haruo Iwano, Takahiro Kawakami (Niigata Univ.) CPM2013-50 |
[more] | CPM2013-50 pp.57-61 |
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| CPM | 2013-08-02 10:55 |
Hokkaido | Barrier Properties of Nanocrystalline HfNx Films Applicable to Through Si Via Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2013-51 |
Through silicon via (TSV) technology is important to realize 3D integration by stacking chips or wafers. We propose conc... [more] | CPM2013-51 pp.63-68 |
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| CPM | 2013-08-02 11:15 |
Hokkaido | Barrier properties of TaWN films in Cu/Si contact Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Tech.) CPM2013-52 |
In the Si-LSI technology, a barrier material of high thermal and structural stability is required for realization of hig... [more] | CPM2013-52 pp.69-72 |
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