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Technical Committee on Component Parts and Materials (CPM) (Searched in: 2011)
Search Results: Keywords 'from:2011-10-26 to:2011-10-26'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2011-10-26 13:00 |
Fukui | Fukui Univ. | Structual characterization of CuAlO2 films deposited by reactive sputtering using composite target Takuya Yokomoto, Yosuke Maeda, Takumi Miyazawa, Tomohiko Yamakami, Katsuya Abe (SinshuUniv.)  CPM2011-109 |
CuAlO2 films were prepared by reactive magnetron sputtering using Al-Cu hybrid targets and these structural properties ... [more] |
CPM2011-109 pp.1-4 |
| CPM | 2011-10-26 13:25 |
Fukui | Fukui Univ. | Examination of ITO Thin Films for Flexible-OLEDs at Low-Voltage Driving Chang Liu, Hiroaki Matsui, Takaaki Kibushi, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) CPM2011-110 |
In order to examine that properties of OLEDs with ITO thin films deposited at low temperature, ITO films was deposited o... [more] | CPM2011-110 pp.5-9 |
| CPM | 2011-10-26 13:50 |
Fukui | Fukui Univ. | Properties of AZO Thin Films Deposited at Room Temperature by the RF-DC Coupled Magnetron Sputtering Method Jun Kashiide, Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Kotaro Nagata, Yasuo Fukushima, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) CPM2011-111 |
In order to examine that influence of low voltage sputtering method on properties of AZO thin films, deposition of AZO t... [more] | CPM2011-111 pp.11-15 |
| CPM | 2011-10-26 14:30 |
Fukui | Fukui Univ. | Investigation of THz-wave emission from the stacked intrinsic Josephson junctions in a Bi2Sr2CaCu2Ox single crystal Takahiro Kato, Takeshi Asano, Satoru Sunaga (Nagaoka Univ. Tech1), Akira Kawakami (NICT), Kanji Yasui, Katsuyoshi Hamasaki (Nagaoka Univ. Tech1) CPM2011-112 |
[more] | CPM2011-112 pp.17-22 |
| CPM | 2011-10-26 14:55 |
Fukui | Fukui Univ. | MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range Toru Hotta, Kenichi Sugita, A. G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) CPM2011-113 |
MOVPE growth of InAlN and InGaN has been studied in order to develop basic technologies for InAlN/InGaN heterostructure ... [more] | CPM2011-113 pp.23-26 |
| CPM | 2011-10-26 15:20 |
Fukui | Fukui Univ. | Anti-corrosive stainless steel separator coated with MOCVD InGaN for polymer electrolyte fuel cell (PEFC) Masanori Shimahashi (Eyetec), Kazuya Matsui (Univ. of Fukui), Koji Okada (Eyetec), Kenichi Sugita (Univ. of Fukui), Hajime Sasaki (Eyetec), Akio Yamamoto (Univ. of Fukui) CPM2011-114 |
This paper reports the application of InGaN films to a polymer electrolyte fuel cells (PEFC) stainless steel (SS) separa... [more] | CPM2011-114 pp.27-30 |
| CPM | 2011-10-26 16:00 |
Fukui | Fukui Univ. | Fabrication of thin films of new alloy semiconductor CuxZnyS by the photochemical deposition method Dula Man, Masaya Ichimura (NIT) CPM2011-115 |
[more] | CPM2011-115 pp.31-36 |
| CPM | 2011-10-26 16:25 |
Fukui | Fukui Univ. | Fabrication of silicon solar cells with low impurity Si with transition metal contaminants Daiki Takeda, Satoru Tuduki, Katsuaki Momiyama, Kensaku Kanomata, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) CPM2011-116 |
(To be available after the conference date) [more] | CPM2011-116 pp.37-39 |
| CPM | 2011-10-26 16:50 |
Fukui | Fukui Univ. | Formation of NiSi silicide and its application to Cu contacts Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2011-117 |
[more] | CPM2011-117 pp.41-45 |
| CPM | 2011-10-27 09:30 |
Fukui | Fukui Univ. | Growth of SiC films by HW-CVD using graphite filaments coated with SiC Yuya Sakaguchi, Ryohei Ushikusa, Takuu Syu, Tomohiko Yamakami, Katsuya Abe (Shinshu Univ) CPM2011-118 |
Silicon carbide films were prepared on p-Si(001) and glass substrates by hot-wire chemical vapor deposition using grap... [more] |
CPM2011-118 pp.47-50 |
| CPM | 2011-10-27 09:55 |
Fukui | Fukui Univ. | Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-119 |
A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the d... [more] | CPM2011-119 pp.51-54 |
| CPM | 2011-10-27 10:20 |
Fukui | Fukui Univ. | MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120 |
This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline Inx... [more] | CPM2011-120 pp.55-58 |
| CPM | 2011-10-27 10:45 |
Fukui | Fukui Univ. | MOVPE growth of InN using NH3 decomposition catalyst Dazio Hironaga, Kenichi Sugita, A.g. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ.of Fukui) CPM2011-121 |
In order to increase the NH3 decomposition rate in the MOVPE growth of InN, the employment of Pt catalyst has been propo... [more] | CPM2011-121 pp.59-62 |
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