| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
Technical Committee on Electron Devices (ED) (Searched in: 2010)
Search Results: Keywords 'from:2011-01-13 to:2011-01-13'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2011-01-13 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | The 5.8GHz Receiving and Rectenna Array for Wireless Communication and Power Transmission Masakazu Hori, Kosuke Isono, Hirofumi Noji, Yasuhiro Shibuya (TUS), Shigeo Kawasaki (JAXA)  ED2010-175 MW2010-135 |
[more] | ED2010-175 MW2010-135 pp.1-6 |
| MW, ED | 2011-01-13 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Study on GaAs-HBT MMIC couplers with feedback circuit techniques Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Akira Inoue (Mitsubishi Electric) ED2010-176 MW2010-136 |
This paper describes circuit design and measurement results of feedback circuit built-in spiral directional couplers and... [more] | ED2010-176 MW2010-136 pp.7-12 |
| MW, ED | 2011-01-13 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Broadside Couplers using Offset-Coupled Lines with Adjacent Ground Through Holes in Multi-layered Substrate Takeshi Yuasa, Yukihiro Tahara, Tetsu Owada, Naofumi Yoneda (Mitsubishi Electric Corp.) ED2010-177 MW2010-137 |
[more] | ED2010-177 MW2010-137 pp.13-18 |
| MW, ED | 2011-01-13 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Power Absorption Characteristics for Uniform Microwave Heating of Medium with High Conductivities Yuki Nakajima, Suguru Imai, Kenji Taguchi, Tatsuya Kashiwa (Kitami Inst. of Tech.), Toshihide Kitazawa (Ritsumeikan Univ.), Masahiro Suzuki, Kan-ichi Fujii (JAEA) ED2010-178 MW2010-138 |
As a part of the nuclear fuel cycle, the MOX fuels for FBR are produced from Pu/U mixed nitrate solution obtained from s... [more] | ED2010-178 MW2010-138 pp.19-22 |
| MW, ED | 2011-01-13 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Broadband High Efficiency Class-E GaN HEMT Amplifier Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) ED2010-179 MW2010-139 |
In this paper, a broadband high efficiency class-E GaN HEMT amplifier is presented. Recently, many over 100W output powe... [more] | ED2010-179 MW2010-139 pp.23-28 |
| MW, ED | 2011-01-13 16:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A High-Speed Digital-to-Analog Converter with InP HBT Technology for Multi-Level Optical Transmission Systems Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT) ED2010-180 MW2010-140 |
High-order multi-level modulation formats, such as 16-QAM and 64-QAM, are promising techniques for constructing beyond-1... [more] | ED2010-180 MW2010-140 pp.29-33 |
| MW, ED | 2011-01-13 16:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 32-GHz Phase Shifter IC with 810° control range Hideyuki Nosaka, Munehiko Nagatani, Kimikazu Sano, Koichi Murata (NTT) ED2010-181 MW2010-141 |
A phase-shifter IC with 810° control range was fabricated using InP HBTs. The phase shifter includes a wideband vector m... [more] | ED2010-181 MW2010-141 pp.35-40 |
| MW, ED | 2011-01-14 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2010-182 MW2010-142 |
By using a dual-gate structure, we have investigated impact of gate-stress position on the current collapse behavior of ... [more] | ED2010-182 MW2010-142 pp.41-44 |
| MW, ED | 2011-01-14 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2010-183 MW2010-143 |
Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed in which a... [more] | ED2010-183 MW2010-143 pp.45-50 |
| MW, ED | 2011-01-14 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2010-184 MW2010-144 |
We propose a novel structure to boost the breakdown voltages of AlGaN/GaN hetero junction field effect transistors (HFET... [more] | ED2010-184 MW2010-144 pp.51-54 |
| MW, ED | 2011-01-14 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN HFETs using highly C-doped layers on Si substrate Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD) ED2010-185 MW2010-145 |
In this paper, AlGaN/GaN/HFET devices on Si substrates were fabricated, and the device characteristics were examined. In... [more] | ED2010-185 MW2010-145 pp.55-59 |
| MW, ED | 2011-01-14 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Developing GaN HEMTs for Ka-Band with 20W Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken Onodera, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2010-186 MW2010-146 |
(To be available after the conference date) [more] | ED2010-186 MW2010-146 pp.61-64 |
| MW, ED | 2011-01-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Process dependence of MOS gate dielectric films on 3C-SiC-OI Keisuke Yokoyama, Hiroyuki Nakamura, Motoi Nakao, Katsunori Onishi (KIT) ED2010-187 MW2010-147 |
We investigated various SiO2 gate insulators on 3C-SiC-OI wafers. While SiC is considered one of the most promising sub... [more] | ED2010-187 MW2010-147 pp.65-68 |
| MW, ED | 2011-01-14 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | III-V quantum well channel MOSFET with back electrode Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) ED2010-188 MW2010-148 |
III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance l... [more] | ED2010-188 MW2010-148 pp.69-73 |
| MW, ED | 2011-01-14 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications Takuya Tsutsumi, Suehiro Sugitani, Kazumi Nishimura, Minoru Ida (NTT) ED2010-189 MW2010-149 |
Increasing the capacitance density would be a very effective way of making InP IC chips smaller because capacitors occup... [more] | ED2010-189 MW2010-149 pp.75-80 |
| MW, ED | 2011-01-14 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric) ED2010-190 MW2010-150 |
This paper presents a low 1/f noise and high reliability InP/GaAsSb DHBT developed for automotive radars. To improve 1/... [more] | ED2010-190 MW2010-150 pp.81-86 |
| MW, ED | 2011-01-14 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs Yasufumi Kawai, Shinji Ujita, Takeshi Fukuda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-191 MW2010-151 |
We present a novel wafer-level-chip-size-package (WLCSP) technique with inverted microstrip line (IMSL) for mm-wave Si-C... [more] | ED2010-191 MW2010-151 pp.87-90 |
[Return to Top Page]