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Technical Committee on Electron Devices (ED) (Searched in: 2011)
Search Results: Keywords 'from:2011-05-19 to:2011-05-19'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, SDM, ED | 2011-05-19 09:00 |
Aichi | Nagoya Univ. (VBL) | Fabration of CuxS and CuxZnyS thin films by the electrochemical deposition method Kai Yang, Yuki Nakashima, Masaya Ichimura (NIT)  ED2011-1 CPM2011-8 SDM2011-14 |
CuxS thin films were deposited by the electrochemical deposition (ECD) method on indium-tin oxide-coated (ITO) glass sub... [more] | ED2011-1 CPM2011-8 SDM2011-14 pp.1-6 |
| CPM, SDM, ED | 2011-05-19 09:25 |
Aichi | Nagoya Univ. (VBL) | High thickness AlN growth with period trench patterned c-plane AlN on a-plane Sapphire by low-pressure HVPE Yuta Takagi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2011-2 CPM2011-9 SDM2011-15 |
[more] | ED2011-2 CPM2011-9 SDM2011-15 pp.7-10 |
| CPM, SDM, ED | 2011-05-19 09:50 |
Aichi | Nagoya Univ. (VBL) | Raman Scattering Spectroscopy for Epitaxial AlN films Shibo Yang, Reina Miyagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroshi Harima (Kyoto Inst. Tech.) ED2011-3 CPM2011-10 SDM2011-16 |
[more] | ED2011-3 CPM2011-10 SDM2011-16 pp.11-14 |
| CPM, SDM, ED | 2011-05-19 10:25 |
Aichi | Nagoya Univ. (VBL) | Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-4 CPM2011-11 SDM2011-17 |
To fabricate very high voltage SiC devices, control of the carrier lifetime is extremely important. However, there have ... [more] | ED2011-4 CPM2011-11 SDM2011-17 pp.15-20 |
| CPM, SDM, ED | 2011-05-19 10:50 |
Aichi | Nagoya Univ. (VBL) | Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer Atsushi Yoshida, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-5 CPM2011-12 SDM2011-18 |
3C-SiC is a promising material for low loss and high voltage power devices. However realization of 3C-SiC devices is dif... [more] | ED2011-5 CPM2011-12 SDM2011-18 pp.21-26 |
| CPM, SDM, ED | 2011-05-19 11:15 |
Aichi | Nagoya Univ. (VBL) | Characterization of SiC photoelectrochemical properties for water splitting Tomonari Yasuda, Masashi Kato, Masaya Ichimura (NIT) ED2011-6 CPM2011-13 SDM2011-19 |
SiC is chemically stable material, and strong against corrosion with electrobath. In addition, because a part of polytyp... [more] | ED2011-6 CPM2011-13 SDM2011-19 pp.27-31 |
| CPM, SDM, ED | 2011-05-19 11:40 |
Aichi | Nagoya Univ. (VBL) | Improvement of n-type 4H-SiC Schottky diode characteristics using passivation of defect by anodic oxidation. Masaya Kimura, Masashi Kato, Masaya Ichimura (NIT) ED2011-7 CPM2011-14 SDM2011-20 |
[more] | ED2011-7 CPM2011-14 SDM2011-20 pp.33-38 |
| CPM, SDM, ED | 2011-05-19 13:00 |
Aichi | Nagoya Univ. (VBL) | Lateral overgrowth of GaN by ammonia-based metal-organic molecular beam epitaxy Shota Uchiyama, Chia-Hung Lin, Ryota Abe, Takahiro Maruyama, Shigeya Naritsuka (Meijo Univ.) ED2011-8 CPM2011-15 SDM2011-21 |
Selective growth of GaN was performed using ammonia-based metal-organic molecular beam epitaxy. Growth temperature was f... [more] | ED2011-8 CPM2011-15 SDM2011-21 pp.39-43 |
| CPM, SDM, ED | 2011-05-19 13:25 |
Aichi | Nagoya Univ. (VBL) | Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Takuya Tabata, Ji-Hyun Paek, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2011-9 CPM2011-16 SDM2011-22 |
InGaN nanowires (NWs) are expected to have a good property with visible long wavelength range. In this study, we attempt... [more] | ED2011-9 CPM2011-16 SDM2011-22 pp.45-48 |
| CPM, SDM, ED | 2011-05-19 13:50 |
Aichi | Nagoya Univ. (VBL) | Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate Keisuke Kumagai, Kohei Shoji, Tsuyoshi Kawai, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ.Tech.) ED2011-10 CPM2011-17 SDM2011-23 |
An AlP-based dilute nitride is one of the candidates for the cladding layer of laser structure in a Si-based optoelectro... [more] | ED2011-10 CPM2011-17 SDM2011-23 pp.49-54 |
| CPM, SDM, ED | 2011-05-19 14:15 |
Aichi | Nagoya Univ. (VBL) | Molecular beam epitaxy growth of BGaP Noriyuki Urakami, Futoshi Fukami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-11 CPM2011-18 SDM2011-24 |
Growth properties of dilute BGaP layers have been investigated by molecular beam epitaxy for strain compensation layers ... [more] | ED2011-11 CPM2011-18 SDM2011-24 pp.55-58 |
| CPM, SDM, ED | 2011-05-19 14:50 |
Aichi | Nagoya Univ. (VBL) | Curvature control of substrate by MOVPE growth of GaN with voids Sumito Ohuchi, Hideto Miyake, Kazumasa Hiramatsu (mie Univ.) ED2011-12 CPM2011-19 SDM2011-25 |
[more] | ED2011-12 CPM2011-19 SDM2011-25 pp.59-62 |
| CPM, SDM, ED | 2011-05-19 15:15 |
Aichi | Nagoya Univ. (VBL) | MOVPE growth of thick InGaN on (1-101)GaN/Si Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech) ED2011-13 CPM2011-20 SDM2011-26 |
We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of les... [more] | ED2011-13 CPM2011-20 SDM2011-26 pp.63-66 |
| CPM, SDM, ED | 2011-05-19 15:40 |
Aichi | Nagoya Univ. (VBL) | MOCVD growth of GaN on graphite substrates Shinichi Kohda, Toshiyuki Takizawa, Nobuaki Nagao, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2011-14 CPM2011-21 SDM2011-27 |
We have successfully grown epitaxial GaN on graphite substrates by metal-organic chemical vapor deposition (MOCVD) with ... [more] | ED2011-14 CPM2011-21 SDM2011-27 pp.67-70 |
| CPM, SDM, ED | 2011-05-19 16:05 |
Aichi | Nagoya Univ. (VBL) | Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy Yasushi Takano, Tatsuya Takagi, Tatsuru Misaki, Ryo Miyahara (Shizuoka Univ.) ED2011-15 CPM2011-22 SDM2011-28 |
GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. The misoriented sub... [more] | ED2011-15 CPM2011-22 SDM2011-28 pp.71-75 |
| CPM, SDM, ED | 2011-05-19 16:40 |
Aichi | Nagoya Univ. (VBL) | Growth of GaN and AlGaN on B-Ga2O3 (100) substrate Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki, Hiroshi Amano (Meijo Univ/Nagoya Univ) ED2011-16 CPM2011-23 SDM2011-29 |
beta-Ga2O3 is one of the most attractive substrates for AlGaN-based UV light-emitting-diodes (LEDs). Its transparency up... [more] | ED2011-16 CPM2011-23 SDM2011-29 pp.77-81 |
| CPM, SDM, ED | 2011-05-19 17:05 |
Aichi | Nagoya Univ. (VBL) | MOVPE growth of nitrides analyzed using a novel in situ X-ray diffraction system Daiki Tanaka, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2011-17 CPM2011-24 SDM2011-30 |
[more] | ED2011-17 CPM2011-24 SDM2011-30 pp.83-87 |
| CPM, SDM, ED | 2011-05-19 17:30 |
Aichi | Nagoya Univ. (VBL) | High-quality AlN/GaN distributed Bragg reflectors grown on AlN templates Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijou Univ.), Isamu Akasaki (Meijou Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-18 CPM2011-25 SDM2011-31 |
AlN/GaN multilayer structures have relatively large refractive index differences in the group-III nitride semiconductors... [more] | ED2011-18 CPM2011-25 SDM2011-31 pp.89-93 |
| CPM, SDM, ED | 2011-05-20 09:00 |
Aichi | Nagoya Univ. (VBL) | High electron mobility InSb film grown by surface reconstruction controlled epitaxy Masayuki Mori, Koji Nakayama, Kimihiko Nakatani, Yuichiro Yasui, Koichi Maezawa (Univ. of Toyama) ED2011-19 CPM2011-26 SDM2011-32 |
[more] | ED2011-19 CPM2011-26 SDM2011-32 pp.95-98 |
| CPM, SDM, ED | 2011-05-20 09:25 |
Aichi | Nagoya Univ. (VBL) | Current path control with Nitride semiconductor-based tunnel junction Kouji Yamashita, Mitsuru Kaga, Kouta Yagi (Meijo Univ.), Atsushi Suzuki (EL-SEED Corp.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-20 CPM2011-27 SDM2011-33 |
Current path control in nitride semiconductor-based devices with tunnel junctions have been investigated along the follo... [more] | ED2011-20 CPM2011-27 SDM2011-33 pp.99-104 |
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