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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2012-11-29 11:30 |
Osaka | Osaka City University | Estimation of Surface Fermi level differences in surface-modified GaN crystals Yohei Sugiura, Ryosuke Amiya, Daiki Tajimi (Kogakuin Univ.), Takeyoshi Onuma (TNCT), Tomohiro Yamaguchi, Tohru Honda (Kogakuin Univ.)  ED2012-68 CPM2012-125 LQE2012-96 |
Surface-Fermi-level differences in hexagonal (0001)GaN as a function of the amount of surface oxides were estimated usin... [more] | ED2012-68 CPM2012-125 LQE2012-96 pp.13-15 |
| SANE | 2012-10-11 14:20 |
Overseas | The SONGDO CONVENSIA, Incheon Korea | Preliminary Design of X-band High Efficiency Onboard Solid State Power Amplifier for Deep Space Missions Using GaN HEMT Yuta Kobayashi, Atsushi Tomiki, Shinichiro Narita, Shigeo Kawasaki (JAXA) SANE2012-74 |
One of the most indispensable impacts on onboard power consumption is generally caused by a transmission power amplifier... [more] | SANE2012-74 pp.101-105 |
| LQE | 2010-12-17 16:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High-power blue-violet laser diodes with window structure Masao Kawaguchi, Hideki Kasugai, Katsuya Samonji, Hiroyuki Hagino, Kenji Orita, Kazuhiko Yamanaka, Yuri Masaaki, Shinichi Takigawa (Panasonic) LQE2010-127 |
High-power GaN-based laser diodes (LDs) are expected as light-source of various high-power applications. The catastrophi... [more] | LQE2010-127 pp.59-62 |
| CPM, LQE, ED | 2010-11-11 10:50 |
Osaka | GaN growth on pseudo (111)Al substrates by RF-MBE Tohru Honda, Masato Hayashi, Taiga Goto, Tatsuhiro Igaki (Kogakuin Univ.) ED2010-144 CPM2010-110 LQE2010-100 |
Fabrication of integrated light-emitting devices based on GaN requires a vertical carrier injection. In the case, GaN gr... [more] | ED2010-144 CPM2010-110 LQE2010-100 pp.11-14 |
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| EMCJ, ITE-BCT | 2009-03-13 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Solid State Power Amplifier with GaN FET for Ku-band Ryo Mochizuki, Tatsuya Fukushima, Hiroaki Iwabuchi, Yoshio Yamada, Takao Kato (Toshiba Corp.) EMCJ2008-121 |
In this paper, we present a solid state power amplifier (SSPA) for Ku-band applications. This is the first report of SSP... [more] | EMCJ2008-121 pp.43-48 |
| LQE, ED, CPM | 2008-11-27 10:20 |
Aichi | Nagoya Institute of Technology | A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo) ED2008-154 CPM2008-103 LQE2008-98 |
Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of layer composition and thickness. ... [more] | ED2008-154 CPM2008-103 LQE2008-98 pp.13-16 |
| ED, SDM | 2007-06-25 15:55 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | Analysis of plasma etching damages in GaN by excess carrier lifetime measurements Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) |
Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more] | |
| SDM, ED, CPM | 2007-05-24 14:50 |
Shizuoka | Shizuoka Univ. | Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.) |
Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more] | |
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