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Technical Committee on Electron Devices (ED) (Searched in: 2008)
Search Results: Keywords 'from:2009-01-14 to:2009-01-14'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2009-01-15 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A Report on the China-Japan Joint Microwave Conference 2008 Futoshi Kuroki (Kure Nat'l Coll of Tech)  ED2008-217 MW2008-182 |
[more] | ED2008-217 MW2008-182 pp.109-112 |
| MW, ED | 2009-01-16 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183 |
[more] | ED2008-218 MW2008-183 pp.113-118 |
| MW, ED | 2009-01-16 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184 |
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] | ED2008-219 MW2008-184 pp.119-123 |
| MW, ED | 2009-01-16 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185 |
AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] | ED2008-220 MW2008-185 pp.125-128 |
| MW, ED | 2009-01-16 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) ED2008-221 MW2008-186 |
We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (... [more] | ED2008-221 MW2008-186 pp.129-133 |
| MW, ED | 2009-01-16 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A High Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer Akihiro Ando, Yoichiro Takayama, Tsuyoshi Yoshida, Ryo Ishikawa, Kazuhiko Honjo (The Univ of Electro-Communications) ED2008-222 MW2008-187 |
This paper describes a high-efficiency Class-F GaN HEMT power amplifier linearized by a diode predistorter. The series d... [more] | ED2008-222 MW2008-187 pp.135-139 |
| MW, ED | 2009-01-16 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Mesa-gate AlGaN/GaN HEMT having nano-width channels Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2008-223 MW2008-188 |
The surrounding field effect was effectively observed in a multi-mesa channel (MMC) using an AlGaN/GaN structure, where ... [more] | ED2008-223 MW2008-188 pp.141-144 |
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