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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-29
09:00
Osaka Ritsumeikan University, Osaka Ibaraki Campus Measurement of Vth Variation due to STI Stress and Inverse Narrow Channel Effect at Ultra-Low Voltage in a Variability-Suppressed Process
Yasuhiro Ogasahara, Hanpei Koike (AIST) CPM2016-76 ICD2016-37 IE2016-71
This paper demonstrates notable impact of Vth shift due to STI-induced dopant redistribution on ultra-low voltage design... [more] CPM2016-76 ICD2016-37 IE2016-71
pp.1-6
SDM 2016-10-26
15:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo) SDM2016-71
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2016-71
pp.15-20
ICD, SDM, ITE-IST [detail] 2016-08-03
14:15
Osaka Central Electric Club Impacts of Flexible V_th control and Low Process Variability of SOTB to Ultra-low Voltage Designs
Yasuhiro Ogasahara (AIST) SDM2016-65 ICD2016-33
This paper discusses impacts of flexible Vth control, low process variability, and steep SS with small on-current of new... [more] SDM2016-65 ICD2016-33
pp.111-116
SDM 2014-10-17
14:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Back-Bias Control technique for Suppression of Die-to-Die Delay Variability of SOTB MOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Koichiro Ishibashi (Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo) SDM2014-94
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2014-94
pp.61-68
SDM 2014-01-29
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Suppression of Die-to-Die Delay Variability of Silicon on Thin Buried Oxide (SOTB) CMOS Circuits by Balanced P/N Drivability Control with Back-Bias for Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Koichiro Ishibashi (Univ. of Electro- Comm.), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo), Yasuo Yamaguchi (LEAP) SDM2013-143
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2013-143
pp.35-38
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