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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM, CPM |
2024-05-24 11:55 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Charge transport control of layered carbon nitride films Noriyuki Urakami, Masaki Tachibana, Yoshio Hashimoto (Shinshu Univ.) ED2024-3 CPM2024-3 SDM2024-10 |
Charge transport in highly ordered crystalline layered carbon nitride depends on the crystal orientation. In particular,... [more] |
ED2024-3 CPM2024-3 SDM2024-10 pp.9-12 |
CPM |
2021-10-27 14:00 |
Online |
Online |
Chemical vapor deposition of layered carbon nitride film Noriyuki Urakami, Kenshuke Takashima, Yoshio Hashimoto (Shinshu Univ.) CPM2021-28 |
Graphitic carbon nitride (g-C3N4) exhibits semiconducting properties and is a promising candidate for use as a metal- fr... [more] |
CPM2021-28 pp.31-35 |
CPM |
2017-10-27 13:30 |
Nagano |
Shinshu Univ. Nagano-Education Campus, E7 building 3F |
Investigation of formation conditions for boron carbon nitride film by chemical vapor deposition Maito Kosaka, Noriyuki Urakami, Yoshio Hashimoto (Shinshu Univ.) CPM2017-67 |
Toward to realization of carbon-based compound semiconductors with wide energy bandgap, as a novel production method of ... [more] |
CPM2017-67 pp.1-4 |
ED, CPM, SDM |
2015-05-28 15:15 |
Aichi |
Venture Business Laboratory, Toyohashi University of Technology |
Control of N composition of GaAsN alloy grown by surface nitridation Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2015-20 CPM2015-5 SDM2015-22 |
We researched growth conditions effect for N composition and luminescence property on dilute nitride GaAsN alloy grown b... [more] |
ED2015-20 CPM2015-5 SDM2015-22 pp.21-26 |
SDM, ED, CPM |
2013-05-16 15:45 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Formation of GaAsN alloys by surface nitridation Noriyuki Urakami, Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada (Toyohashi Univ. of Tech.) ED2013-20 CPM2013-5 SDM2013-27 |
GaAsN alloys was grown by surface nitridation and applied for the growth of quantum well (QW). Increase of incorporation... [more] |
ED2013-20 CPM2013-5 SDM2013-27 pp.23-26 |
ED, SDM, CPM |
2012-05-17 13:40 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Improvement in crystalline quality of GaAsN alloy by high temperature growth Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2012-18 CPM2012-2 SDM2012-20 |
GaAsN alloys are one of the attractive candidates for the active layers of the luminescence devices on Si. Compared with... [more] |
ED2012-18 CPM2012-2 SDM2012-20 pp.7-10 |
CPM, SDM, ED |
2011-05-19 14:15 |
Aichi |
Nagoya Univ. (VBL) |
Molecular beam epitaxy growth of BGaP Noriyuki Urakami, Futoshi Fukami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-11 CPM2011-18 SDM2011-24 |
Growth properties of dilute BGaP layers have been investigated by molecular beam epitaxy for strain compensation layers ... [more] |
ED2011-11 CPM2011-18 SDM2011-24 pp.55-58 |
ED, CPM, SDM |
2009-05-15 10:55 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells. Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-30 CPM2009-20 SDM2009-20 |
We investigated the luminescence properties of Mg-doped p-GaPN alloys grown by molecular beam eitaxy (MBE). The near ban... [more] |
ED2009-30 CPM2009-20 SDM2009-20 pp.65-70 |
ED, CPM, SDM |
2009-05-15 11:20 |
Aichi |
Satellite Office, Toyohashi Univ. of Technology |
Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21 |
In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of I... [more] |
ED2009-31 CPM2009-21 SDM2009-21 pp.71-76 |
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