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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
PRMU, MVE, VRSJ-SIG-MR, IPSJ-CVIM |
2024-01-25 14:52 |
Kanagawa |
Keio Univ. (Hiyoshi Campus) |
A Study on Quality Improvement of the Shape-Manipulable Deep Generative Model SP-GAN Kenta Nakada, Hideaki Kimata (Kogakuin Univ.) MVE2023-35 |
[more] |
MVE2023-35 pp.13-18 |
MW, ED |
2023-01-27 14:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network Shigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata (SEI) ED2022-94 MW2022-153 |
[more] |
ED2022-94 MW2022-153 pp.40-43 |
ED, MW |
2018-01-25 15:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Delay Time Analysis of InAlN-MIS-HEMTs on Si Substrates Tomohiro Yoshida (SEI), Isao Makabe (NICT), Isao Makabe (SEI), Issei Watanabe, Akifumi Kasamatsu (NICT), Ken Nakata, Kazutaka Inoue (SEI) ED2017-94 MW2017-163 |
[more] |
ED2017-94 MW2017-163 pp.7-10 |
MW, ED |
2015-01-16 11:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Improvement of RF performance of GaN-HEMT on silicon substrate Isao Makabe, Hiroyuki Ichikawa, Keiichi Yui, Tsuyoshi Kouchi, Kazutaka Inoue, Ken Nakata (SEI) ED2014-128 MW2014-192 |
[more] |
ED2014-128 MW2014-192 pp.65-70 |
ICSS, IPSJ-SPT |
2014-03-28 09:00 |
Okinawa |
Meio Univiersity |
Ruleset Optimization for Detecting Malware-Derived Traffic Based on Network-Dependent Log Analysis Kensuke Nakata, Kazunori Kamiya, Hiroshi Kurakami, Kazufumi Aoki, Takeshi Yagi (NTT) ICSS2013-74 |
Recent cyber-attacks rapidly get advanced to infect terminals via invalid network access and could damage enterprise act... [more] |
ICSS2013-74 pp.95-100 |
ICSS, IPSJ-SPT |
2014-03-28 14:20 |
Okinawa |
Meio Univiersity |
Design of HTTP Communication Profiling for Infected Hosts Detection Daiki Chiba, Kensuke Nakata, Mitsuaki Akiyama, Kazufumi Aoki, Kazunori Kamiya, Takeshi Yagi (NTT) ICSS2013-84 |
Countermeasures against malware should need both prevention and detection of malware infection. Detection of malware-inf... [more] |
ICSS2013-84 pp.155-160 |
CPM, LQE, ED |
2010-11-12 11:15 |
Osaka |
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Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113 |
A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] |
ED2010-157 CPM2010-123 LQE2010-113 pp.67-70 |
IA |
2009-11-25 16:00 |
Saga |
Saga-Ken |
An analysis of IDS alerts to grasp attack situation in the third party's network Kensuke Nakata, Hiroki Takakura, Yasuo Okabe (Kyoto Univ) IA2009-62 |
To fight against emerging cyber attacks on Internet,
various types of security solutions have been proposed.
As one ... [more] |
IA2009-62 pp.25-30 |
CPM, ED, LQE |
2007-10-12 09:50 |
Fukui |
Fukui Univ. |
Low leakage current ITO schottky electrode for AlGaN/GaN HEMT Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) ED2007-167 CPM2007-93 LQE2007-68 |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] |
ED2007-167 CPM2007-93 LQE2007-68 pp.57-61 |
ED, CPM, LQE |
2006-10-05 13:25 |
Kyoto |
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Improvement of Breakdown Voltage of AlGaN/GaN HEMT Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] |
ED2006-153 CPM2006-90 LQE2006-57 pp.7-12 |
LQE, ED, CPM |
2005-10-13 14:30 |
Shiga |
Ritsumeikan Univ. |
Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications Ken Nakata, Takeshi Kawasaki, Seiji Yaegashi (Eudyna Device Inc.) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] |
ED2005-129 CPM2005-116 LQE2005-56 pp.51-56 |
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