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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED (Workshop) |
2012-06-29 11:15 |
Okinawa |
Okinawa Seinen-kaikan |
Fabrication and Characterization of Asymmetric-Gate GaAs Nanowire Transistors for Electrical Brownian Ratchet Takayuki Tanaka, Yuki Nakano, Toru Muramatsu, Seiya Kasai (Hokkaido Univ.) |
The molecular motors in biological systems harvest energy from thermal noise and generate coherent motion. Its mechanism... [more] |
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ED, SDM |
2012-02-08 13:50 |
Hokkaido |
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Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) ED2011-157 SDM2011-174 |
Low-frequency noise in SiN-gate GaAs-based nanowire field-effect transistors (FETs) is characterized and analyzed focusi... [more] |
ED2011-157 SDM2011-174 pp.89-93 |
ED, SDM |
2012-02-08 14:15 |
Hokkaido |
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Study on nonlinear transfer characteristics in a GaAs three-branch nanowire junction device using a light-induced local conductance modulation method Masaki Sato, Toru Muramatsu, Seiya Kasai (Hokkaido Univ.) ED2011-158 SDM2011-175 |
Semiconductor three-branch nanowire junction devices show nonlinear electrical characteristics at room temperature and t... [more] |
ED2011-158 SDM2011-175 pp.95-99 |
ED |
2011-07-29 16:10 |
Niigata |
Multimedia system center, Nagaoka Univ. of Tech. |
Characterization of Low-Frequency Noise in SiNx Insulator-Gate GaAs Etched Nanowire FETs Toru Muramatsu, Kensuke Miura, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) ED2011-43 |
Noise in a semiconductor field-effect transistor (FET) is going to increase, as the device size is reduced. The importan... [more] |
ED2011-43 pp.31-34 |
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