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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED
(Workshop)
2012-06-29
11:15
Okinawa Okinawa Seinen-kaikan Fabrication and Characterization of Asymmetric-Gate GaAs Nanowire Transistors for Electrical Brownian Ratchet
Takayuki Tanaka, Yuki Nakano, Toru Muramatsu, Seiya Kasai (Hokkaido Univ.)
The molecular motors in biological systems harvest energy from thermal noise and generate coherent motion. Its mechanism... [more]
ED, SDM 2012-02-08
13:50
Hokkaido   Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs
Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) ED2011-157 SDM2011-174
Low-frequency noise in SiN-gate GaAs-based nanowire field-effect transistors (FETs) is characterized and analyzed focusi... [more] ED2011-157 SDM2011-174
pp.89-93
ED, SDM 2012-02-08
14:15
Hokkaido   Study on nonlinear transfer characteristics in a GaAs three-branch nanowire junction device using a light-induced local conductance modulation method
Masaki Sato, Toru Muramatsu, Seiya Kasai (Hokkaido Univ.) ED2011-158 SDM2011-175
Semiconductor three-branch nanowire junction devices show nonlinear electrical characteristics at room temperature and t... [more] ED2011-158 SDM2011-175
pp.95-99
ED 2011-07-29
16:10
Niigata Multimedia system center, Nagaoka Univ. of Tech. Characterization of Low-Frequency Noise in SiNx Insulator-Gate GaAs Etched Nanowire FETs
Toru Muramatsu, Kensuke Miura, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) ED2011-43
Noise in a semiconductor field-effect transistor (FET) is going to increase, as the device size is reduced. The importan... [more] ED2011-43
pp.31-34
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