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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:40 |
Online | Online | Evaluation of dielectric properties of ferroelectric thin films for neural networks Yuma Ishisaki, Hiroki Umemura, Daiki Matsukawa, Mutsumi Kimura (RU), Eisuke Tokumitsu (JAIST), Kenichi Haga, Toshihiro Doi (MMC)  EID2020-5 SDM2020-39 |
The neuromorphic system is a hardware-level biosimulation system that implements neuron and synaptic elements. It has th... [more] | EID2020-5 SDM2020-39 pp.17-20 |
| SDM, OME | 2020-04-13 16:50 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Fabrication of MoS2 and WS2 films by chemical solution process for thin film transistors Joonam Kim, Takahiro Nakajima, Yuki Kobayashi, Ken-ichi Haga, Eisuke Tokumitsu (JAIST) |
[more] | |
| EID, SDM, ITE-IDY [detail] | 2018-12-25 15:45 |
Kyoto | Neural network using Bi3.25La0.75Ti3O12 thin film for synapse Yuta Miyabe, Jumpei Shimura, Homare Yoshida, Isato Ogawa (Ryukoku Univ.), Kenichi Haga, Eisuke Tokumitsu (JAIST), Mutsumi Kimura (Ryukoku Univ.) |
[more] | ||
| SDM | 2011-07-04 09:40 |
Aichi | VBL, Nagoya Univ. | Fabrication of SiC-MOSFET with Al2O3 gate insulator Hiroyuki Yamada, Akio Ishiguro (Tokyo Tech), Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani (Mitsubishi), Eisuke Tokumitsu (Tokyo Tech) SDM2011-52 |
[more] | SDM2011-52 pp.11-15 |
| SDM, OME | 2010-04-23 17:00 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Fabrication and characterization of IGZO-channel ferroelectric-gate TFTs with P(VDF-TrFE) film Gwang-Geun Lee (Tokyo Inst. of Tech.), Sung-Min Yoon (ETRI), Joo-Won Yoon (Tokyo Inst. of Tech.), Yoshihisa Fujisaki (Hitachi), Hiroshi Ishiwara, Eisuke Tokumitsu (Tokyo Inst. of Tech.) SDM2010-16 OME2010-16 |
Poly(vinylidene fluoride trifluoroethylene) , P(VDF-TrFE), and In-Ga-Zn-O (IGZO)were employed to fabricate nonvolatile m... [more] | SDM2010-16 OME2010-16 pp.71-75 |
| SDM, OME | 2008-04-11 14:30 |
Okinawa | Okinawa Seinen Kaikan | Oxide-channel thin film transistors with ferroelectric and high-k gate insulators Eisuke Tokumitsu, Hiroshi Shibata, Tomohiro Oiwa, Yohei Kondo (Tokyo Tech) SDM2008-11 OME2008-11 |
(To be available after the conference date) [more] | SDM2008-11 OME2008-11 pp.51-56 |
| SDM | 2008-03-14 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabrication and characterization of oxide-channel ferroelectric-gate nonvolatile memory devices Hiroshi Shibata, Tomohiro Oiwa, Eisuke Tokumitsu (Tokyo Tech) SDM2007-274 |
[more] | SDM2007-274 pp.7-12 |
| SDM | 2006-06-21 13:00 |
Hiroshima | Faculty Club, Hiroshima Univ. | Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition Shiro Hino, Tomohiro Hatayama, Eisuke Tokumitsu (Tokyo Inst. of Tech.), Naruhisa Miura, Tatsuo Oomori (Mitsubishi Elec. Corp.) |
Improvement of insulator/SiC interface is remained as a key issue to fabricate SiC-power-MOSFETs. In this work, to avoid... [more] | SDM2006-42 pp.1-5 |
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